JANTX2N5681-Transistor by JAN – High-Power NPN Transistor, TO-3 Package

  • This transistor controls current flow effectively, enabling precise signal amplification in electronic circuits.
  • Its voltage rating supports stable operation under varying electrical conditions, enhancing circuit safety.
  • The device features a compact package, allowing efficient use of board space in dense electronic assemblies.
  • Ideal for switching applications, it enhances performance in power regulation and signal processing tasks.
  • Manufactured to meet strict quality standards, ensuring long-term reliability and consistent operation.
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产品上方询盘

JANTX2N5681-Transistor Overview

The JANTX2N5681 is a high-performance NPN bipolar junction transistor designed for use in demanding industrial and military applications. Featuring robust electrical characteristics, this transistor delivers reliable switching and amplification capabilities under harsh environmental conditions. With a collector-emitter voltage rating of 100V and a collector current capacity of up to 10A, it is optimized for medium-power applications requiring high gain and fast response. The device??s hermetically sealed metal can package enhances durability and thermal dissipation, ensuring long-term operational stability. Engineers and sourcing specialists seeking reliable, high-quality transistors will find this product well-suited for precision power regulation and signal processing tasks. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N5681-Transistor Key Features

  • High Collector Current Capacity: Supports up to 10A, enabling effective handling of medium-power loads without compromising performance.
  • Voltage Ratings: Collector-Emitter voltage of 100V ensures robust operation in high-voltage switching and amplification scenarios.
  • High DC Current Gain (hFE): Offers gain values typically ranging from 40 to 160, facilitating efficient signal amplification with precise control.
  • Hermetically Sealed Metal Can Package: Provides enhanced protection against environmental contaminants and improves thermal management, extending device longevity.

JANTX2N5681-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector-Base Voltage (VCBO)120V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)10A
DC Current Gain (hFE)40 to 160??
Transition Frequency (fT)3MHz
Power Dissipation (PD)30W
Operating Junction Temperature (TJ)-65 to +200??C

JANTX2N5681-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage tolerance compared to many standard NPN transistors, making it ideal for rugged industrial and military environments. Its hermetic metal can package ensures enhanced reliability by protecting against moisture and mechanical stresses. The wide operating temperature range and consistent gain performance provide engineers with dependable switching and amplification, reducing the risk of failure in critical applications.

Typical Applications

  • Power amplification in industrial control systems requiring reliable medium-power transistors capable of sustained high current and voltage operation.
  • Switching devices in military-grade electronics, where environmental resistance and thermal stability are critical.
  • Signal processing circuits demanding high gain and low noise amplification in harsh ambient conditions.
  • General-purpose transistor roles in aerospace instrumentation and rugged electronic assemblies.

JANTX2N5681-Transistor Brand Info

The JANTX2N5681 is part of a family of JANTX series transistors known for military-grade quality and reliability. Manufactured to stringent standards, this transistor meets rigorous qualification requirements for high-reliability applications. The product??s construction in a hermetically sealed metal can package reflects its design focus on durability and performance in challenging environments. It is widely adopted by defense contractors and industrial manufacturers who prioritize long-life components with consistent electrical parameters.

FAQ

What is the maximum collector current rating of this transistor?

The device supports a maximum collector current of 10 amperes, allowing it to handle substantial load currents in medium-power applications without thermal or electrical compromise.

What voltage levels can this transistor safely operate at?

It can reliably operate with collector-emitter voltages up to 100 volts and collector-base voltages up to 120 volts, making it suitable for high-voltage switching and amplification tasks.

How does the hermetically sealed metal can package benefit the transistor?

This packaging protects the transistor from moisture, dust, and mechanical shock, enhancing its reliability and lifespan especially in harsh or mission-critical environments.

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产品中间询盘

What is the typical DC current gain range for this transistor?

The DC current gain (hFE) for this transistor ranges from 40 to 160, providing flexibility for various amplification needs while maintaining stable performance.

Is this transistor suitable for operation at elevated temperatures?

Yes, it supports an operating junction temperature range from -65??C to +200??C, enabling use in extreme thermal environments without degradation of electrical characteristics.

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