JANTX2N5680-Transistor High-Power NPN Amplifier Transistor in TO-3 Package – JANTX2N5680

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • Its voltage rating supports stable operation under moderate electrical stress, ensuring consistent performance.
  • The device’s compact package reduces board space, simplifying integration into dense circuit designs.
  • Ideal for switching applications in power management, it helps optimize energy use and responsiveness.
  • Manufactured with quality standards that enhance durability and long-term reliability in various environments.
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产品上方询盘

JANTX2N5680-Transistor Overview

The JANTX2N5680 transistor is a high-reliability, silicon NPN bipolar junction transistor designed for military and aerospace applications. Featuring a robust collector-emitter voltage rating of 100V and a DC current gain (hFE) ranging from 40 to 120, this transistor ensures stable amplification and switching performance under demanding conditions. Its hermetically sealed metal can package offers enhanced environmental resistance, making it ideal for high-reliability circuits requiring long-term durability. Engineers and sourcing specialists can rely on this device for precision switching, amplification, and signal processing in rugged industrial environments. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N5680-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltages up to 100V, enabling operation in circuits with higher voltage demands without breakdown risks.
  • Wide Current Gain Range: DC current gain (hFE) of 40 to 120 offers flexibility for amplification and switching tasks across diverse applications.
  • Hermetic Metal Can Package: Provides superior protection against moisture, dust, and mechanical stress, enhancing long-term reliability in harsh environments.
  • High Collector Current Rating: Maximum collector current of 5A supports power-intensive loads, suitable for robust control circuits.

JANTX2N5680-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 5 A
DC Current Gain (hFE) 40 to 120 ?C
Transition Frequency (fT) 15 MHz
Power Dissipation (PD) 30 W
Operating Temperature Range -55 to +200 ??C

JANTX2N5680-Transistor Advantages vs Typical Alternatives

This transistor offers significant advantages over typical general-purpose devices, particularly in high-voltage and high-current scenarios. Its hermetic metal can package ensures superior environmental protection and reliability, making it well-suited for aerospace and military applications where failure is not an option. The wide DC current gain range and power dissipation rating provide enhanced flexibility and robustness, while the high transition frequency supports faster switching speeds compared to standard industrial transistors.

Typical Applications

  • Military and aerospace control systems requiring reliable high-voltage switching and amplification under extreme environmental conditions.
  • Power amplification stages in communication equipment where stable gain and high current handling are essential.
  • Industrial motor control circuits demanding robust transistor operation at elevated temperatures and voltages.
  • High-reliability signal processing modules in harsh environments, including avionics and defense electronics.

JANTX2N5680-Transistor Brand Info

The JANTX2N5680 transistor is a part of the JAN (Joint Army-Navy) series, representing military-grade semiconductor devices built to stringent standards for durability and performance. Manufactured under rigorous quality control, this transistor is designed to meet or exceed MIL-STD requirements, ensuring consistent operation in critical applications. The JAN designation signifies its suitability for defense and aerospace use, affirming its reputation for dependable, long-term service in demanding industrial technology sectors.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for the device is rated at 5 amperes, allowing it to handle significant power loads in switching and amplification circuits safely.

Can this transistor operate reliably at elevated temperatures?

Yes, it is rated for an operating temperature range from -55??C up to +200??C, making it suitable for harsh environments including aerospace and military applications.

What type of package does this transistor use, and why is it important?

This transistor is housed in a hermetically sealed metal can package, which provides excellent protection against moisture, contaminants, and mechanical stress, ensuring reliability in critical and rugged operating conditions.

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产品中间询盘

How does the DC current gain range affect circuit design?

The DC current gain (hFE) between 40 and 120 offers flexibility for designers, enabling the transistor to function effectively in both low and high gain configurations, depending on the circuit’s amplification or switching requirements.

Is this transistor suitable for RF applications?

With a transition frequency of approximately 15 MHz, this transistor is capable of moderate-frequency operation, making it appropriate for some RF amplification and switching tasks, although it is primarily designed for high-power and high-reliability roles.

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