JANTX2N5671-Transistor Overview
The JANTX2N5671 is a high-reliability silicon NPN bipolar junction transistor designed for use in military and aerospace applications. Featuring a robust metal can package and enhanced electrical characteristics, this transistor offers dependable switching and amplification performance under demanding conditions. Its optimized gain and voltage ratings make it suitable for critical circuits requiring stable operation across wide temperature ranges. Manufactured to stringent standards, the device ensures consistent performance in environments with high vibration, shock, and temperature extremes. Ideal for precision analog and digital military-grade systems, the JANTX2N5671 from IC Manufacturer delivers trusted semiconductor performance where reliability is paramount.
JANTX2N5671-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Silicon Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 10 | A |
| Gain Bandwidth Product (fT) | 7 | MHz |
| DC Current Gain (hFE) | 60 to 300 | ?C |
| Operating Junction Temperature | -65 to +200 | ??C |
| Package Type | TO-18 Metal Can | ?C |
| Power Dissipation (Ptot) | 20 | W |
JANTX2N5671-Transistor Key Features
- High collector current capacity up to 10A: Enables handling of significant loads in demanding circuit designs without performance degradation.
- Wide operating temperature range (-65??C to +200??C): Ensures stable transistor operation in extreme environmental conditions typical in aerospace and military applications.
- Robust metal TO-18 package: Provides excellent mechanical durability and superior thermal dissipation for long-term reliability under vibration and shock.
- High DC current gain (hFE) range: Allows for versatile amplifier and switching configurations with predictable gain performance across the specified current range.
Typical Applications
- Military-grade power switching circuits: Designed for reliable control of power stages in defense electronics where failure is not an option.
- Aerospace instrumentation: Used in sensor drivers and signal conditioning circuits requiring stable gain and low noise under temperature extremes.
- High-reliability analog amplification: Suited for precision analog front-ends in avionics and radar systems.
- Test and measurement equipment: Provides dependable transistor performance in ruggedized automated test setups.
JANTX2N5671-Transistor Advantages vs Typical Alternatives
This transistor offers superior high-current handling and extended temperature operation compared to standard commercial transistors. The metal can package enhances thermal management and mechanical robustness, critical for harsh environments. Its wide gain range and voltage ratings provide design flexibility, while its military-grade qualification ensures consistent performance where standard devices may fail, delivering enhanced reliability and longevity in mission-critical applications.
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JANTX2N5671-Transistor Brand Info
The JANTX2N5671 is a JEDEC-registered transistor type commonly produced by multiple manufacturers specializing in military and aerospace semiconductor components. This designation indicates compliance with stringent military standards for quality and reliability. Typically offered by legacy semiconductor brands and their authorized distributors, the device is part of a series known for ruggedness and stable electrical parameters. The product aligns with MIL-STD requirements and is sourced through reputable suppliers ensuring traceability and authenticity for defense and industrial applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this transistor is 10 amperes, enabling it to handle substantial load currents suitable for power
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