JANTX2N5667S-Transistor NPN Power Transistor in TO-3 Package by JANTX

  • This transistor controls high-current electronic signals, enabling efficient switching in circuits.
  • It features a voltage rating suitable for robust operation under demanding electrical conditions.
  • The compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for power amplifier circuits, it enhances signal amplification with reliable performance.
  • Manufactured to meet strict quality standards, ensuring consistent durability and long-term use.
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产品上方询盘

JANTX2N5667S-Transistor Overview

The JANTX2N5667S transistor is a high-performance silicon NPN bipolar junction transistor designed for medium power switching and amplification applications. It features a robust collector current rating and a voltage capability suitable for a wide range of industrial and military uses. With its hermetically sealed metal can package, this transistor offers enhanced reliability and thermal stability in demanding environments. Engineered to meet stringent military standards, it ensures consistent performance under harsh conditions, making it ideal for systems requiring dependable electronic switching and signal amplification. Available through IC Manufacturer, this device supports applications that require durability and precision.

JANTX2N5667S-Transistor Key Features

  • High collector current capability: Supports up to 10A, enabling efficient handling of medium power loads in switching circuits.
  • Collector-emitter voltage of 80V: Provides ample voltage margin for a variety of industrial and military applications.
  • Hermetically sealed metal can package: Enhances reliability and thermal dissipation, crucial for high-stress operational environments.
  • Gain bandwidth product (hFE) range: Offers stable current gain from 20 to 70, allowing consistent amplification performance.
  • High transition frequency: Suitable for moderate frequency switching and amplification tasks.
  • Designed to MIL-STD specifications: Ensures ruggedness and long-term durability under extreme conditions.
  • Low saturation voltage: Improves energy efficiency in power switching applications.

JANTX2N5667S-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 80 V
Collector Current (IC) 10 A
DC Current Gain (hFE) 20 to 70
Power Dissipation (Ptot) 70 W
Transition Frequency (fT) ?? 2 MHz
Package Type Hermetically Sealed Metal Can (TO-39)
Operating Junction Temperature -65??C to +200??C

JANTX2N5667S-Transistor Advantages vs Typical Alternatives

This transistor excels over typical alternatives by combining high current capacity with a robust voltage rating and military-grade reliability. Its hermetically sealed metal can package offers superior thermal management and environmental protection compared to plastic-encapsulated devices. This ensures greater longevity and stable performance in harsh industrial or defense applications. Additionally, the low saturation voltage and consistent gain parameters promote efficient power handling and signal amplification, making it a trusted choice for engineers requiring precision and durability.

Typical Applications

  • Medium power switching circuits in industrial control systems where reliable load handling and fast switching are critical.
  • Signal amplification in communication equipment requiring stable gain and frequency response.
  • Military and aerospace electronics demanding compliance with MIL-STD for ruggedness and environmental resilience.
  • Power management modules in instrumentation and measurement devices that operate across wide temperature ranges.

JANTX2N5667S-Transistor Brand Info

The JANTX2N5667S transistor is a legacy military-spec device recognized for its reliability and quality. Manufactured under strict quality controls to meet MIL-STD requirements, it is designed specifically for applications demanding high durability and performance in extreme conditions. Its hermetically sealed metal can package and robust electrical characteristics make it a preferred component for defense contractors, aerospace engineers, and industrial technologists seeking a trusted transistor solution backed by proven operational history.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 10 amperes, enabling it to handle medium power loads efficiently in switching and amplification circuits.

Is this transistor suitable for high-temperature environments?

Yes, the device is rated to operate within a junction temperature range from -65??C up to +200??C, making it suitable for demanding industrial and military environments.

What type of package does this transistor use?

It comes in a hermetically sealed metal can package, typically TO-39 style, which provides enhanced protection against moisture and mechanical stresses compared to plastic packages.

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产品中间询盘

Can this transistor be used in RF applications?

While it has a transition frequency of at least 2 MHz, it is primarily designed for switching and amplification in moderate frequencies rather than high-frequency RF applications.

How does this transistor compare to plastic-encapsulated alternatives?

The hermetically sealed metal can package offers better thermal dissipation, improved mechanical robustness, and superior reliability under harsh environmental conditions compared to typical plastic-packaged transistors.

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