JANTX2N5664-Transistor by JAN – High-Power NPN Transistor, TO-3 Package

  • This transistor amplifies electrical signals, enabling precise control in various electronic circuits.
  • Designed with a high voltage rating, it ensures safe operation under demanding electrical conditions.
  • The compact package minimizes board space, facilitating efficient layout in tight assemblies.
  • Ideal for switching applications, it enhances performance in power management systems.
  • Manufactured to meet strict quality standards, providing consistent reliability over long-term use.
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JANTX2N5664-Transistor Overview

The JANTX2N5664 transistor is a robust, high-performance NPN bipolar junction transistor designed for use in demanding industrial and military applications. Known for its high voltage and current handling capabilities, it supports switching and amplification tasks with enhanced reliability. Its military-grade construction ensures durability under extreme environmental conditions, making it suitable for aerospace and defense electronics. With a focus on long-term stability and thermal resilience, this transistor offers dependable operation in critical circuits. For sourcing and detailed specifications, visit IC Manufacturer.

JANTX2N5664-Transistor Key Features

  • High Collector-Emitter Voltage: Supports up to 100 V, enabling use in high-voltage switching applications.
  • Maximum Collector Current: Handles continuous currents up to 10 A, ensuring robust power handling in demanding loads.
  • Military-Grade Reliability: Built to withstand harsh environments with rigorous screening and burn-in tests.
  • Thermal Stability: Low junction temperature rise improves device longevity and reduces thermal management needs.
  • High Gain Characteristics: Provides consistent current amplification with a DC gain (hFE) typically ranging between 20 and 70.

JANTX2N5664-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 115 W
DC Current Gain (hFE) 20-70 ?C
Transition Frequency (fT) 3 MHz
Operating Junction Temperature (TJ) 200 ??C

JANTX2N5664-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to standard commercial transistors, ensuring robust performance in high-power circuits. Its military-grade testing guarantees enhanced reliability and thermal endurance, providing more consistent operation under harsh conditions. The combination of high gain and power dissipation capacity allows for efficient switching and amplification with reduced risk of thermal failure, making it advantageous over typical industrial alternatives.

Typical Applications

  • High-power switching circuits in aerospace and defense systems, where reliable operation under extreme conditions is mandatory.
  • Power amplifiers requiring high collector current and voltage handling capabilities.
  • Industrial motor control circuits that demand durable, high-reliability transistors.
  • General purpose amplification and switching in rugged electronic equipment.

JANTX2N5664-Transistor Brand Info

The JANTX2N5664 is a military-grade transistor known for its rugged construction and consistent performance in demanding environments. Designed to meet stringent defense and aerospace standards, this product line undergoes comprehensive screening and quality control to ensure reliability. It is widely recognized for its robustness in power applications where long-term stability and high voltage capability are critical.

FAQ

What type of transistor is the JANTX2N5664?

The JANTX2N5664 is an NPN bipolar junction transistor (BJT) designed primarily for high power and high voltage applications. It features military-grade specifications, ensuring reliability in harsh environments.

What are the maximum voltage ratings for this transistor?

This device supports a collector-emitter voltage (VCEO) of up to 100 volts, a collector-base voltage (VCBO) of 120 volts, and an emitter-base voltage (VEBO) of 5 volts, making it suitable for high-voltage circuits.

Can the transistor handle high collector current continuously?

Yes, it can sustain continuous collector currents up to 10 amperes, enabling it to manage significant power loads in switching and amplification tasks without degradation.

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What is the typical gain range of the JANTX2N5664?

The DC current gain (hFE) typically ranges between 20 and 70, providing stable amplification levels for various application needs in industrial and military electronics.

What environmental conditions can this transistor withstand?

Designed to military standards, the transistor is built to function reliably under extreme temperatures up to 200??C junction temperature and is tested against vibration, shock, and other environmental stresses common in aerospace and defense sectors.

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