JANTX2N5660-Transistor Overview
The JANTX2N5660 is a high-performance NPN bipolar junction transistor designed for applications requiring reliable switching and amplification under demanding conditions. Featuring a collector-emitter voltage rating of 100V and a collector current capacity of 10A, this transistor supports robust power handling. It is constructed to meet military standards ensuring enhanced durability and stability, making it suitable for aerospace, defense, and industrial electronics. The device is optimized for high gain and low saturation voltage, delivering efficient operation and thermal robustness. For sourcing and detailed technical insight, visit IC Manufacturer.
JANTX2N5660-Transistor Key Features
- High Voltage and Current Handling: Supports up to 100V collector-emitter voltage and 10A collector current, enabling operation in high-power circuits with confidence.
- Military-Grade Reliability: Built to JANTX specifications, ensuring superior ruggedness for mission-critical applications requiring dependable performance.
- Low Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
- High DC Current Gain (hFE): Provides amplification with gains ranging from 40 to 160, facilitating effective signal processing and power control.
JANTX2N5660-Transistor Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | V |
| Collector-Base Voltage | VCBO | 100 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current (Continuous) | IC | 10 | A |
| Power Dissipation | PC | 75 | W |
| DC Current Gain (hFE) | hFE | 40 to 160 | ?? |
| Transition Frequency | fT | ?? | MHz |
| Operating Temperature Range | TJ | -65 to +200 | ??C |
JANTX2N5660-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and military-grade reliability compared to standard commercial transistors. Its high current capacity combined with a low saturation voltage ensures better efficiency and thermal performance. The enhanced DC gain improves amplification accuracy, making it ideal for sensitive industrial and defense electronics. Its robust construction meets stringent standards, providing long-term operational stability where conventional devices may fail.
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Typical Applications
- Power switching circuits in aerospace and defense systems, where rugged performance and high current capability are essential for mission-critical reliability.
- Amplifier stages in industrial control equipment requiring consistent gain and thermal stability over a wide temperature range.
- High-power motor control circuits benefiting from low saturation voltage and efficient switching.
- General-purpose power transistor replacement in legacy military and industrial designs demanding robust and proven components.
JANTX2N5660-Transistor Brand Info
The JANTX2N5660 is branded under the JANTX series, which is recognized for military specification transistors engineered to perform reliably in harsh environments. These devices adhere to rigorous testing and quality assurance processes defined by defense standards. This product line is favored by engineers requiring dependable semiconductor components with guaranteed performance margins for critical industrial and aerospace applications.
FAQ
What is the maximum collector current rating of the JANTX2N5660 transistor?
The transistor supports a maximum continuous collector current of 10 amperes, enabling it to handle high-power loads in demanding electronic circuits without degradation or failure.
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What voltage limits should be observed when using this transistor?
This device has a maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) rating of 100 volts. Exceeding these values can cause breakdown and permanent damage to the transistor.
How does the JANTX2N5660 perform in terms of gain?
The transistor offers a DC current gain (hFE) ranging from 40 to 160, depending on operating conditions. This range provides flexibility for amplification requirements in various circuit designs.
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What temperature range can this transistor operate within?
The device is rated for operation between -65??C and +200??C junction temperature, making it suitable for environments with extreme temperature variations commonly encountered in aerospace and industrial applications.
Why is the JANTX2N5660 suitable for military and aerospace applications?
Its construction to JANTX military specifications ensures enhanced ruggedness, reliability, and performance stability under harsh conditions. This includes strict quality controls and testing, ensuring consistent function in critical systems.
