JANTX2N5416S-Transistor NPN Power Transistor TO-126 Package by ON Semiconductor

JANTX2N5416S-Transistor Overview

The JANTX2N5416S is a high-voltage NPN silicon transistor designed for industrial and military applications requiring robust switching and amplification capabilities. Built to meet stringent JAN (Joint Army-Navy) standards, this transistor ensures enhanced reliability under demanding environmental and electrical conditions. It offers a collector-emitter voltage rating suitable for high-voltage circuits and is tailored for use in power management, amplifier stages, and signal processing. Sourcing specialists and engineers will appreciate its proven performance and compliance with military specifications. For further technical insights and procurement options, visit IC Manufacturer.

JANTX2N5416S-Transistor Technical Specifications

JANTX2N5416S-Transistor Key Features

• High voltage capability: Supports collector-emitter voltages up to 200 V, enabling use in demanding power switching applications.
• Robust military-grade reliability: Built to JAN standards for operation in harsh environments, ensuring long-term stability and consistent performance.
• Moderate current handling: Max collector current of 3 A allows efficient control of medium power loads without thermal compromise.
• Low noise and stable gain: DC gain range of 10 to 50 facilitates predictable amplification in signal processing circuits.
• Versatile TO-39 package: Metal can enclosure provides excellent thermal dissipation and mechanical protection.

Typical Applications

• Power supplies and voltage regulation circuits where high voltage switching with reliability is essential.
• Amplifier stages in industrial control systems requiring stable gain and low noise.
• Military and aerospace electronics demanding components that meet strict environmental and performance standards.
• General-purpose switching and driver circuits in ruggedized electronic assemblies.

JANTX2N5416S-Transistor Advantages vs Typical Alternatives

This transistor offers a distinct advantage in high-voltage and high-reliability applications compared to commercial-grade alternatives. Its compliance with JAN military standards ensures superior tolerance to temperature extremes, mechanical stress, and electrical transients. The combination of a high collector-emitter voltage rating and moderate current capacity supports efficient operation in demanding industrial environments. Furthermore, the metal TO-39 package enhances thermal management and mechanical robustness, making it a preferred choice for engineers seeking durable, long-lasting components.

JANTX2N5416S-Transistor Brand Info

The JANTX2N5416S is typically manufactured under strict military and aerospace quality control standards. It is often supplied by various reputable semiconductor manufacturers who specialize in JAN (Joint Army-Navy) qualified components. These manufacturers ensure the device undergoes rigorous screening and burn-in processes to meet MIL-PRF-19500 specifications. This transistor is recognized for its reliability and consistency, making it a trusted option in defense, aerospace, and industrial sectors where component failure is not an option.

FAQ

What is the maximum voltage the JANTX2N5416S can handle?

The transistor supports a maximum collector-emitter voltage (V_CEO) of 200 volts, allowing it to operate safely in high