JANTX2N5339-Transistor Overview
The JANTX2N5339 is a high-reliability NPN bipolar junction transistor specifically designed for demanding military and aerospace applications. Featuring a robust silicon planar epitaxial structure, it offers excellent power handling capability along with consistent electrical characteristics under harsh environmental conditions. Built to meet stringent JEDEC and MIL-STD specifications, this transistor ensures dependable performance in amplification and switching roles. Its hermetic glass-to-metal sealing further enhances durability and stability, making it suitable for critical industrial electronics where long-term reliability is paramount. For sourcing and detailed technical support, visit IC Manufacturer.
JANTX2N5339-Transistor Key Features
- High Power Dissipation: Handles up to 1 watt power dissipation, enabling efficient signal amplification in power-sensitive circuits.
- Low Noise Figure: Ensures minimal signal distortion, critical for precision analog applications and RF amplification.
- Wide Operating Temperature Range: Rated from -65??C to +200??C, providing reliable operation in extreme environmental conditions.
- Hermetic Glass-to-Metal Sealing: Improves device longevity by preventing moisture and contaminant ingress, essential for aerospace standards.
JANTX2N5339-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon Planar Epitaxial |
| Collector-Base Voltage (VCBO) | 60 V |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A (max) |
| Power Dissipation (PD) | 1 W |
| DC Current Gain (hFE) | 40 to 160 (at IC=10 mA) |
| Transition Frequency (fT) | 50 MHz (typical) |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | Hermetic Metal Can (TO-18) |
JANTX2N5339-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and thermal stability compared to typical commercial-grade devices, thanks to its military-grade construction and hermetic sealing. Its wide temperature range and robust voltage ratings provide dependable performance in harsh environments, making it superior for aerospace and defense applications. The device??s low noise and consistent gain further contribute to improved circuit sensitivity and accuracy, distinguishing it from standard industrial transistors.
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Typical Applications
- High-reliability signal amplification in aerospace and military communication systems, where stable gain and low noise are critical for maintaining signal integrity over extended operation.
- Switching applications in harsh environments requiring transistors that withstand extreme temperature and mechanical stress.
- Industrial control circuits needing devices with consistent electrical parameters to ensure precise operation.
- Custom electronic assemblies in aerospace instrumentation and radar systems demanding long-term reliability and ruggedness.
JANTX2N5339-Transistor Brand Info
The JANTX2N5339 transistor is a specialty product designed to meet the rigorous standards of military and aerospace industries. Manufactured to strict JEDEC and MIL-STD requirements, it reflects a commitment to quality and performance under extreme conditions. Its metal can hermetic package and silicon planar epitaxial construction emphasize durability and electrical stability. This transistor is favored by engineers and sourcing specialists needing dependable components for mission-critical electronics.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current for the device is rated at 1 ampere. This ensures it can handle moderate power loads typical in amplification and switching circuits without compromising reliability.
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What temperature range can this transistor operate within?
This transistor is qualified to operate across a broad temperature range from -65??C to +200??C, making it suitable for extreme environment applications such as aerospace and military electronics.
What packaging does this transistor use and why is it important?
The transistor is packaged in a hermetic metal can, commonly known as a TO-18 package. This packaging provides a sealed environment that protects the device from moisture and contaminants, ensuring long-term stability and reliability.
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What are the key voltage ratings for this transistor?
Key voltage ratings include a collector-base voltage of 60 V, collector-emitter voltage of 40 V, and emitter-base voltage of 5 V. These ratings define the maximum voltages the transistor can safely handle during operation.
How does the DC current gain range affect circuit design?
The DC current gain (hFE) ranges from 40 to 160 at a collector current of 10 mA. This wide gain range allows designers to select devices that match the amplification requirements of their specific circuits, providing flexibility in design and ensuring consistent performance.







