JANTX2N5153-Transistor by JAN | NPN Power Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling stable control in various electronic circuits.
  • Its voltage rating supports reliable operation under demanding electrical conditions, preventing failures.
  • The compact package reduces board space usage, facilitating efficient layout in tight electronic assemblies.
  • Ideal for signal amplification in communication devices, enhancing overall system performance and clarity.
  • Manufactured following quality standards to ensure consistent performance and long-term durability.
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产品上方询盘

JANTX2N5153-Transistor Overview

The JANTX2N5153 is a high-voltage NPN bipolar junction transistor designed for reliable switching and amplification in demanding industrial and military applications. Featuring a collector-emitter voltage rating of 200V and a continuous collector current up to 10A, this device supports robust performance in power management circuits. Its rugged construction ensures enhanced durability and thermal stability, making it ideal for use in high-reliability systems. Sourcing specialists and engineers benefit from its standardized JAN (Joint Army-Navy) qualification, guaranteeing consistent quality and traceability. For detailed specifications and sourcing, visit IC Manufacturer.

JANTX2N5153-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltage up to 200V, enabling operation in high-voltage circuits with improved safety margins.
  • High Current Handling: Continuous collector current of 10A allows for efficient switching and amplification in medium-power applications.
  • JAN Qualification: Military-standard certification ensures reliable performance under harsh environmental and electrical conditions.
  • Robust Package Design: TO-3 metal can package offers superior thermal dissipation and mechanical stability for extended device lifespan.

JANTX2N5153-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 200 V
Collector-Base Voltage (VCBO) 300 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) Continuous 10 A
Base Current (IB) 3 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 20 to 70 (at IC=4A)
Operating Junction Temperature -65??C to +200??C
Package Type TO-3 Metal Can

JANTX2N5153-Transistor Advantages vs Typical Alternatives

This transistor offers significant advantages over typical alternatives with its high voltage and high current capabilities combined with military-grade JAN qualification. Its rugged TO-3 packaging enhances thermal management and mechanical protection, delivering improved reliability and operational stability. These factors ensure consistent performance in critical systems where sensitivity to electrical stress and temperature fluctuations is a concern.

Typical Applications

  • Power Amplification: Ideal for industrial power amplifiers requiring high current and voltage handling with reliable thermal performance.
  • Switching Circuits: Used in high-voltage switching applications where fast and stable transistor operation is essential.
  • Military Electronics: Suitable for defense systems demanding stringent quality and environmental durability.
  • Voltage Regulation: Applied in voltage regulator circuits to maintain stable output under varying load conditions.

JANTX2N5153-Transistor Brand Info

The JANTX2N5153 transistor is part of the Joint Army-Navy series, representing a military-tested and approved semiconductor device. This classification ensures that the transistor meets strict standards for performance, reliability, and traceability. The product is manufactured under rigorous quality control processes, making it a trusted component for engineers and sourcing professionals working on mission-critical and industrial-grade electronic designs.

FAQ

What does the JAN qualification mean for this transistor?

JAN qualification indicates that the transistor has been tested and certified to meet military standards for reliability, environmental resilience, and electrical performance. This ensures consistent operation in harsh conditions and long-term durability, which is critical for defense and aerospace applications.

What package type does this transistor use, and why is it important?

This transistor is housed in a TO-3 metal can package, known for excellent thermal conductivity and mechanical robustness. The package helps dissipate heat efficiently and protects the transistor from physical damage, supporting high-power operation and extended device life.

Can this transistor handle high currents continuously?

Yes, the device supports a continuous collector current of up to 10A, making it well-suited for applications requiring sustained high current flow without performance degradation.

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产品中间询盘

What are the maximum voltage ratings for this transistor?

The transistor has a maximum collector-emitter voltage of 200V, collector-base voltage of 300V, and emitter-base voltage of 7V, allowing it to operate safely in circuits with elevated voltage levels.

Is this transistor suitable for temperature extremes?

Yes, it is rated for operation across a wide temperature range from -65??C to +200??C, which makes it suitable for use in demanding environments where temperature fluctuations are common.

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