JANTX2N5003-Transistor NPN Power Amplifier in TO-3 Metal Can Package – Motorola

  • This transistor amplifies electrical signals, enabling enhanced control in electronic circuits.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The device??s TO-39 package offers a compact footprint, facilitating efficient board layout.
  • Ideal for switching applications, it improves circuit responsiveness in power management systems.
  • Manufactured under strict quality controls, this component delivers consistent reliability in various environments.
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JANTX2N5003-Transistor Overview

The JANTX2N5003 is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification applications in industrial electronics. Specified for military and aerospace use, this transistor offers reliable performance under demanding conditions, including high voltage and power dissipation. With a collector-emitter voltage rating of 400V and collector current capacity up to 10A, it suits power control circuits requiring durable and precise semiconductor components. Its hermetically sealed metal can package ensures long-term stability and resistance to environmental stress. For qualified sourcing and detailed specs, visit IC Manufacturer.

JANTX2N5003-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 400 V
Collector-Base Voltage (VCBO) 700 V
Emitter-Base Voltage (VEBO) 9 V
Collector Current (IC) 10 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 20 – 70 ?C
Transition Frequency (fT) 8 MHz
Operating Temperature Range -65 to +200 ??C

JANTX2N5003-Transistor Key Features

  • High voltage handling: Rated for 400V collector-emitter voltage, enabling use in circuits with elevated voltage requirements.
  • High current capacity: Supports up to 10A collector current, suitable for power switching and amplification tasks demanding robust current flow.
  • Wide temperature range: Operates reliably from -65??C to +200??C, ensuring stable performance in harsh or extreme environments.
  • Hermetically sealed metal can package: Protects against moisture and contaminants, enhancing long-term reliability and durability in industrial conditions.

Typical Applications

  • High-voltage power switching in aerospace and military-grade power supplies where reliability under extreme conditions is critical.
  • Amplification stages in industrial control systems requiring stable gain and high power dissipation capabilities.
  • Pulse switching circuits with high voltage and current demands, typical in radar and communication equipment.
  • Power regulation and motor control applications where robust transistor performance supports system longevity and efficiency.

JANTX2N5003-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard BJTs, making it ideal for high-power, high-voltage industrial applications. Its military-grade design ensures enhanced reliability, especially in harsh environments. The hermetic metal can package provides protection against environmental degradation, offering longer operational life and consistent performance compared to plastic-encapsulated transistors.

JANTX2N5003-Transistor Brand Info

The JANTX2N5003 transistor is part of the JAN (Joint Army-Navy) series, originally standardized for military and aerospace applications. These devices are manufactured by several reputable semiconductor producers adhering to stringent quality and reliability standards. The JAN designation guarantees compliance with military specifications, including rigorous screening and testing processes. This product is often supplied by established semiconductor manufacturers specializing in high-reliability discrete components designed for defense and industrial sectors.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter voltage rating is 400 volts, allowing the transistor to handle relatively high voltage levels suitable for power switching and amplification applications in demanding environments.

What current can the transistor safely conduct?

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