JANTX2N4449UB-Transistor Overview
The JANTX2N4449UB-Transistor is a high-performance bipolar junction transistor designed for military and aerospace applications requiring robust reliability and consistent electrical characteristics. This transistor is manufactured under stringent quality controls to meet the demanding standards of defense-grade electronic systems. With its NPN silicon epitaxial planar structure, it provides stable switching and amplification capabilities at moderate power levels. The device supports collector currents up to 600mA and collector-emitter voltages up to 80V, making it suitable for signal amplification and switching in industrial and aerospace environments. Available through IC Manufacturer, it ensures long-term availability and traceability for critical projects.
JANTX2N4449UB-Transistor Key Features
- High Voltage Tolerance: Supports collector-emitter voltage up to 80V, enabling use in high-voltage switching circuits.
- Moderate Collector Current: Handles collector current up to 600mA, offering robust drive capability for various load conditions.
- Military-Grade Reliability: Compliant with JAN (Joint Army-Navy) standards, ensuring enhanced durability and performance under harsh environmental conditions.
- Silicon Epitaxial Planar Construction: Provides low noise and high gain, which is essential for precision amplification in sensitive circuits.
JANTX2N4449UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon Epitaxial Planar |
| Collector-Emitter Voltage (V_CEO) | 80 V |
| Collector-Base Voltage (V_CBO) | 100 V |
| Emitter-Base Voltage (V_EBO) | 6 V |
| Collector Current (I_C) | 600 mA |
| Power Dissipation (P_TOT) | 625 mW |
| DC Current Gain (h_FE) | 70 to 700 (depending on test conditions) |
| Transition Frequency (f_T) | 300 MHz (typical) |
| Package Type | TO-18 Hermetic Metal Can |
JANTX2N4449UB-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling capabilities compared to typical general-purpose transistors, making it ideal for high-reliability and high-performance military applications. Its hermetic TO-18 metal can packaging ensures excellent environmental resistance, enhancing device longevity and stability. Additionally, the broad current gain range and high transition frequency provide precise control and fast switching, outperforming many commercial-grade alternatives in demanding industrial electronics.
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Typical Applications
- Signal amplification and switching in aerospace and military communication systems where reliability and stable performance are critical under extreme conditions.
- High-frequency amplifier stages requiring low noise and high gain in radar and telemetry systems.
- Control circuits in industrial automation that demand robust transistor operation at moderate power levels.
- General purpose switching in defense electronic assemblies where environmental robustness and long-term availability are essential.
JANTX2N4449UB-Transistor Brand Info
The JANTX2N4449UB-Transistor is part of a legacy line of military-grade transistors manufactured to meet stringent Joint Army-Navy (JAN) specifications. This product line is recognized for its rigorous quality assurance processes and consistent electrical performance. Designed for high-reliability applications, the transistor??s brand heritage emphasizes durability, traceability, and compliance with defense industry standards. It is widely sourced by engineers and procurement specialists who require dependable components for critical systems.
FAQ
What does the JAN prefix signify in the transistor part number?
The JAN prefix indicates that the transistor meets the Joint Army-Navy military standards, which include stringent requirements for environmental testing, reliability, and quality control. This ensures the device is suitable for use in harsh and mission-critical applications.
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Can this transistor be used in high-frequency applications?
Yes, the transistor typically features a transition frequency (f_T) around 300 MHz, making it suitable for moderate to high-frequency amplifier circuits commonly found in communication and radar systems.
What packaging type does this transistor use, and why is it important?
This transistor is housed in a TO-18 hermetic metal can package, which provides excellent protection against moisture, contaminants, and mechanical stress, thus enhancing reliability in rugged environments.
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What is the maximum collector current the transistor can handle?
The device supports a maximum collector current of 600mA, which allows it to drive moderately high loads without compromising performance or reliability.
Is the transistor suitable for commercial consumer electronics?
While it can function in commercial circuits, this transistor is specifically designed and qualified for military and aerospace applications where enhanced reliability, extended temperature ranges, and traceability are critical requirements.
