JANTX2N4449U-Transistor Overview
The JANTX2N4449U is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade applications. It features a robust silicon planar epitaxial structure, ensuring reliable operation in harsh environments. The transistor offers excellent frequency response and gain characteristics, making it suitable for high-speed switching and low-noise amplification tasks. Its hermetically sealed metal can package enhances durability and thermal stability. Engineers and sourcing specialists will appreciate its compliance with stringent military specifications, ensuring consistent performance under demanding conditions. For more detailed information, visit the IC Manufacturer.
JANTX2N4449U-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector-Base Voltage (Vcbo) | 100 V |
| Emitter-Base Voltage (Vebo) | 6 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Pd) | 625 mW |
| Transition Frequency (fT) | 250 MHz |
| DC Current Gain (hFE) | 40 to 300 |
| Package | Hermetically Sealed TO-18 Metal Can |
JANTX2N4449U-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage rating of 100 V, it supports robust switching in high-voltage circuits, ensuring reliability under stress.
- Wide current handling range: Rated for up to 600 mA collector current, it accommodates moderate power amplification and switching needs efficiently.
- Excellent frequency response: A transition frequency of 250 MHz enables fast switching and good performance in high-frequency analog circuits.
- Hermetically sealed metal package: Enhances device durability and thermal stability, critical for military and industrial applications requiring long-term reliability.
Typical Applications
- High-speed switching circuits in military and aerospace systems, where reliability and precise control are critical.
- Low-noise amplification stages in communication and radar equipment, benefiting from its high gain and frequency response.
- Industrial control systems requiring rugged, dependable transistors for switching and amplification under harsh conditions.
- Signal processing circuits demanding a stable, hermetically sealed transistor to maintain performance over extended operational periods.
JANTX2N4449U-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling capabilities combined with a high transition frequency, outperforming many standard NPN devices. The hermetic metal can package ensures enhanced environmental protection and thermal reliability, making it highly suitable for demanding military and industrial environments. Its broad DC current gain range allows flexible design options while maintaining consistent performance, providing engineers with a robust alternative to typical plastic-encapsulated transistors.
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JANTX2N4449U-Transistor Brand Info
The JANTX2N4449U is a military specification transistor originally manufactured to meet JANTX standards, which denote stringent quality and reliability criteria for semiconductor devices used in defense and aerospace applications. This device is commonly produced by established semiconductor manufacturers specializing in military-grade components, ensuring compliance with MIL-STD-883 testing for durability, thermal cycling, and electrical performance. The product’s brand heritage emphasizes long-term operational stability and traceability, critical for sourcing specialists in high-reliability sectors.
FAQ
What type of transistor is the JANTX2N4449U?
The JANTX2N4449U is an NPN bipolar junction transistor designed for switching and amplification. It features a silicon planar epitaxial construction and is packaged in a hermetically sealed metal can, which supports reliable performance in industrial and military applications.
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What are the maximum voltage ratings for this transistor?
This transistor supports a maximum collector-emitter voltage of 100 V and a collector-base voltage of 100 V, making it suitable for circuits requiring high-voltage operation without compromising reliability.
What current and power ratings does the device support?
The device can handle a collector







