JANTX2N4449-Transistor by JAN | High-Speed Switching Transistor | TO-92 Package

  • This transistor amplifies electrical signals, improving circuit performance and control in various electronic devices.
  • Its high voltage rating ensures stable operation under demanding conditions, preventing failure from voltage spikes.
  • The compact TO-18 metal can package offers efficient heat dissipation and saves board space in tight layouts.
  • Ideal for switching applications in power supplies, it enhances efficiency and reduces energy loss during operation.
  • Manufactured to meet rigorous quality standards, it provides consistent performance and long-term reliability.
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JANTX2N4449-Transistor Overview

The JANTX2N4449 transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification in demanding military and industrial applications. Rated for high voltage and current handling, it ensures reliable operation under harsh conditions, including elevated temperatures and mechanical stress. Its robust construction meets stringent military standards, making it ideal for aerospace, defense, and other critical electronics systems. Available from IC Manufacturer, this transistor delivers consistent gain and switching speed, ensuring dependable performance for precision signal processing and power control.

JANTX2N4449-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 100V, enabling use in high-voltage circuits without risk of breakdown.
  • Robust current capacity: Handles collector currents up to 600mA, making it suitable for moderate power amplification and switching roles.
  • Military-grade reliability: Meets MIL-STD-750 and MIL-PRF-19500 specifications, ensuring stable performance under extreme environmental conditions.
  • Fast switching speed: Low transition and storage times reduce switching losses, enhancing efficiency in pulse and digital circuits.

JANTX2N4449-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 600 mA
Power Dissipation (PD) 625 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40 ?C 150 Unitless
Operating Temperature Range -55 to +200 ??C

JANTX2N4449-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to standard small-signal transistors, combined with military-grade reliability for harsh environments. Its fast switching speeds and stable gain characteristics enhance circuit efficiency, while its construction reduces failure rates in critical applications. These advantages make it a preferred choice where performance, durability, and precision are paramount.

Typical Applications

  • High-speed switching circuits in aerospace and defense systems, where reliable operation under extreme temperature and vibration is essential for mission-critical performance.
  • Signal amplification in radar and communication equipment requiring stable gain and low noise characteristics.
  • Power regulation modules in industrial electronics that demand robust transistor operation at elevated voltages and currents.
  • Pulse generation and timing circuits benefiting from fast transition frequencies and minimal switching delays.

JANTX2N4449-Transistor Brand Info

The JANTX2N4449 transistor is produced under strict military specifications to ensure maximum reliability and performance in challenging environments. This product line is recognized for its rugged design and long-term stability, making it a trusted solution for defense contractors and industrial manufacturers. The transistor undergoes rigorous qualification testing consistent with MIL-STD-750 and MIL-PRF-19500 standards, affirming its suitability for high-reliability applications.

FAQ

What are the key electrical limits of the JANTX2N4449 transistor?

The transistor supports a maximum collector-emitter voltage of 100V and a collector current rating of up to 600mA. It can dissipate power up to 625mW and operates reliably across a wide temperature range from -55??C to +200??C.

How does the transistor??s gain vary with operating conditions?

The DC current gain (hFE) typically ranges from 40 to 150 depending on collector current and temperature. This ensures consistent amplification performance across different circuit conditions.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency of approximately 100MHz, it supports high-speed switching and amplification in RF and pulse circuits commonly found in communications and radar systems.

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产品中间询盘

What standards ensure the reliability of this transistor?

The device meets military standards MIL-STD-750 and MIL-PRF-19500, which cover environmental stress, electrical performance, and long-term reliability, making it ideal for mission-critical applications.

Can the transistor be used in power regulation circuits?

Due to its voltage and current ratings and power dissipation capability, it is well-suited for moderate power control and regulation tasks in industrial electronics, ensuring stable operation under load.

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