JANTX2N4239-Transistor by JAN – NPN Power Transistor, TO-39 Metal Can Package

JANTX2N4239-Transistor Overview

The JANTX2N4239 transistor is a high-reliability silicon NPN bipolar junction transistor designed for use in military and aerospace applications. It offers robust performance under demanding environmental conditions, including extended temperature ranges and high voltage tolerance. With a collector current rating up to 10A and a collector-emitter voltage of 100V, this device supports high power switching and amplification tasks. Its JANTX military specification ensures enhanced quality and durability, making it suitable for mission-critical circuits requiring consistent, stable operation. More information is available at IC Manufacturer.

JANTX2N4239-Transistor Key Features

• High collector current capacity: Supports up to 10A, enabling efficient handling of high power loads in demanding electronic circuits.
• Wide voltage rating: Collector-emitter voltage up to 100V provides versatility for various high-voltage switching and amplification applications.
• Military-grade reliability: JANTX qualification ensures superior performance in harsh environments, guaranteeing long-term durability and stability.
• Robust thermal characteristics: Designed for operation across a broad temperature range, maintaining consistent performance under thermal stress.

JANTX2N4239-Transistor Technical Specifications

JANTX2N4239-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high current and voltage ratings combined with military-grade reliability. Compared to standard commercial transistors, it delivers superior thermal stability and durability in extreme environments. These features make it ideal for applications requiring enhanced ruggedness and consistent performance, offering engineers and sourcing specialists a dependable choice for critical power switching and amplification tasks.

Typical Applications

• High-power switching circuits in aerospace and defense systems, where reliability under extreme temperature and voltage conditions is critical for mission success.
• Amplification stages in radar and communication equipment, requiring stable gain and high-frequency response.
• Power management in military-grade power supplies, supporting robust current handling and thermal endurance.
• Industrial control systems exposed to harsh environments, benefiting from the transistor??s rugged construction and long-term operational stability.

JANTX2N4239-Transistor Brand Info

The JANTX2N4239 is a product that adheres to the JANTX military specification standard, which signifies a higher level of quality assurance and ruggedness compared to commercial-grade transistors. This certification ensures the device has passed stringent testing for electrical performance, environmental endurance, and reliability. It is manufactured under strict quality controls to meet the demands of aerospace and defense industries, providing engineers with a trusted component for high-reliability electronic designs.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is rated at 10 amperes. This high current capacity allows it to manage substantial power loads in high-demand circuits.

Can this transistor operate in extreme temperature environments?

Yes, it supports an operating temperature range from -65??C up to +200??C, making it suitable for use in harsh, extreme temperature conditions common in military and aerospace applications.

What voltage limits should be respected when using this transistor?

The device can safely handle a collector-emitter voltage and collector-base voltage up to 100 volts, while the emitter-base voltage should not exceed 5 volts to maintain reliable operation.

How does the DC current gain affect its performance?

The transistor offers a DC current gain ranging from 40 to 160, allowing for effective amplification while maintaining stability across different operating conditions.

Is this transistor suitable for RF applications?

With a transition frequency of approximately 4 MHz, this transistor can be used in certain RF amplification stages, although it is primarily optimized for power switching and low to medium frequency operations.