JANTX2N4235L-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

JANTX2N4235L-Transistor Overview

The JANTX2N4235L transistor is a high-voltage NPN bipolar junction transistor designed primarily for military and aerospace applications requiring robust performance under demanding conditions. Featuring a collector-to-emitter voltage rating of 250 V and a continuous collector current of 10 A, this transistor provides reliable switching and amplification capabilities. Its hermetically sealed metal can package ensures enhanced durability and stability in harsh environments. Engineers and sourcing specialists will appreciate its rugged design that meets stringent military standards, making it a dependable choice for high-reliability electronic circuits. For detailed sourcing and specifications, visit IC Manufacturer.

JANTX2N4235L-Transistor Key Features

• High collector-emitter voltage (250 V): Enables operation in high-voltage switching and amplification circuits, expanding application versatility.
• Continuous collector current rating of 10 A: Supports substantial load currents without degradation, ensuring stable performance in power applications.
• Hermetically sealed metal can package: Provides superior environmental protection, improving reliability in extreme temperature and humidity conditions.
• High gain bandwidth product: Delivers efficient signal amplification with low distortion, critical for precision analog and RF applications.

JANTX2N4235L-Transistor Technical Specifications

JANTX2N4235L-Transistor Advantages vs Typical Alternatives

This transistor stands out with its high voltage and current ratings combined with a hermetically sealed package, ensuring superior reliability in extreme environments compared to typical commercial transistors. Its robust power handling and military-grade construction provide enhanced sensitivity and stability, making it ideal for critical aerospace and defense systems where long-term durability and consistent performance are essential.

Typical Applications

• High-voltage switching and amplification in military and aerospace electronic circuits requiring rugged components that can withstand harsh environmental conditions.
• Power regulation and control in industrial equipment where high collector current and voltage handling are necessary.
• Signal amplification in RF and analog systems demanding low distortion and stable gain over a wide temperature range.
• Replacement or upgrade for legacy high-reliability transistor applications within avionics and defense electronics.

JANTX2N4235L-Transistor Brand Info

The JANTX2N4235L is part of the JANTX series, representing a line of military-grade transistors manufactured to meet stringent aerospace and defense standards. These components undergo rigorous screening and testing to ensure compliance with high-reliability requirements. The robust metal can packaging and proven electrical characteristics make this transistor a trusted choice for engineers designing mission-critical systems. Its legacy and consistent availability support long lifecycle management in demanding applications.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The transistor supports a maximum collector-emitter voltage (V_CEO) of 250 volts. This high voltage rating permits its use in circuits requiring robust switching and amplification capabilities at elevated voltages.

Can this transistor handle high currents continuously?

Yes, it can handle a continuous collector current of up to 10 amperes, making it suitable for power applications that demand stable current conduction without thermal or electrical degradation.

What type of package does this transistor use, and why is it significant?

This device is housed in a hermetically sealed metal can package, which offers superior protection against moisture, dust, and mechanical stress. This packaging is critical for ensuring long-term reliability in harsh military and aerospace environments.

What temperature range is this transistor rated for?

The operating temperature range spans from -65??C to +200??C, supporting functionality in extreme cold and high-temperature conditions typical of aerospace and defense applications.

How does the DC current gain vary for this transistor?

The DC current gain (h_FE) ranges between 30 and 90, depending on the specific operating conditions. This range provides adequate amplification for various analog and switching circuit designs requiring moderate gain levels.