JANTX2N4150-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its voltage rating supports stable operation under varying power conditions, ensuring circuit integrity.
  • The compact package design offers board-space savings ideal for dense electronic assemblies.
  • Commonly used in power regulation circuits, it helps maintain consistent energy flow and device performance.
  • Manufactured to meet rigorous quality standards, it assures long-term reliability in demanding environments.
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JANTX2N4150-Transistor Overview

The JANTX2N4150 is a high-performance NPN bipolar junction transistor designed for rugged military and industrial applications, offering reliable switching and amplification capabilities. Rated for a collector-emitter voltage of 80V and collector current up to 10A, it supports demanding power loads with robust thermal and electrical stability. This transistor features a maximum power dissipation of 115W, making it suitable for high-power circuits where durability and efficiency are critical. Its military specification ensures consistent performance under harsh environmental conditions, making it a preferred choice for engineers requiring dependable semiconductor components. For precise sourcing and technical details, visit IC Manufacturer.

JANTX2N4150-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling robust control of significant load currents in power circuits.
  • Elevated collector-emitter voltage rating: Withstands voltages up to 80V, ensuring reliable operation in high-voltage environments.
  • Military-grade durability: Manufactured to stringent JANTX standards, providing enhanced reliability and extended lifecycle in extreme conditions.
  • High power dissipation: Capable of dissipating up to 115W, reducing thermal stress and improving system stability.

JANTX2N4150-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vce) 80 V
Collector-Base Voltage (Vcb) 100 V
Emitter-Base Voltage (Veb) 5 V
Collector Current (Ic) 10 A
Power Dissipation (Ptot) 115 W
DC Current Gain (hFE) 25 to 70 (at Ic = 4A)
Transition Frequency (fT) ?? 4 MHz
Operating Junction Temperature (Tj) -65??C to +200??C

JANTX2N4150-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage tolerance compared to standard commercial types, making it ideal for applications requiring high power and robust switching. Its military-grade construction ensures enhanced reliability and thermal performance under extreme conditions, which typical alternatives may lack. The high power dissipation capability reduces the risk of thermal failure, providing longer operational life and minimizing maintenance requirements.

Typical Applications

  • Power amplification stages in industrial and military communication systems, where high current and voltage ratings ensure signal integrity and robust operation.
  • Switching applications in power supplies and motor control circuits requiring efficient handling of large currents.
  • High-reliability environments such as avionics and defense electronics that demand parts conforming to military standards.
  • General-purpose amplification and switching in heavy-duty electronic equipment exposed to harsh environmental conditions.

JANTX2N4150-Transistor Brand Info

The JANTX2N4150 is produced under military standard JANTX classification, representing a trusted line of transistors known for durability and precision. This product line is designed to meet rigorous quality and performance criteria, enabling dependable use in mission-critical and industrial systems. Its brand reputation is built on consistent manufacturing excellence and thorough testing, ensuring compliance with stringent MIL-SPEC requirements for enhanced reliability in demanding electronic applications.

FAQ

What type of transistor is the JANTX2N4150 and what are its typical voltage ratings?

The JANTX2N4150 is an NPN bipolar junction transistor. It has a collector-emitter voltage rating of 80V, a collector-base voltage of 100V, and an emitter-base voltage of 5V, making it suitable for medium to high voltage applications.

What is the maximum collector current this transistor can handle?

This transistor supports a maximum collector current of 10 amperes, enabling it to manage substantial load currents in power amplification or switching circuits.

How does the power dissipation rating impact the device’s performance?

With a power dissipation rating of 115 watts, the transistor can effectively handle high power loads without overheating, which enhances thermal stability and reliability in demanding environments.

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Why is the JANTX2N4150 suitable for military or industrial applications?

Its compliance with JANTX military standards ensures the transistor withstands harsh environmental conditions, including wide temperature ranges and mechanical stress, making it ideal for defense and industrial electronics.

What is the typical gain (hFE) range of this transistor?

The DC current gain (hFE) of the device ranges from 25 to 70 at a collector current of 4A, offering sufficient amplification for a variety of switching and amplifying applications.

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