JANTX2N4033UB/TR Transistor – High Power NPN, JANTX Brand, TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its maximum voltage rating ensures safe operation under varied electrical conditions, protecting the circuit.
  • The compact package design allows for board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for use in power regulation modules, it helps maintain stable voltage in automotive or industrial systems.
  • Manufactured to meet stringent quality standards, it delivers consistent performance and long-term reliability.
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产品上方询盘

JANTX2N4033UB/TR Overview

The JANTX2N4033UB/TR is a high-reliability NPN bipolar junction transistor designed for demanding industrial and military applications. It delivers robust performance with a collector current rating of 10A and a collector-emitter voltage of 80V, ensuring durable operation under high power and voltage conditions. Packaged in a TO-3 metal case, this transistor offers excellent thermal dissipation and mechanical stability. Its guaranteed electrical parameters and compliance to JAN (Joint Army-Navy) standards make it ideal for critical environments requiring stringent quality and reliability. Source this transistor confidently from IC Manufacturer for applications needing consistent and reliable switching and amplification.

JANTX2N4033UB/TR Key Features

  • High Collector Current (10A) enables handling of substantial load currents, supporting power-intensive circuits with ease.
  • Collector-Emitter Voltage of 80V ensures the device operates safely in high-voltage environments, providing design flexibility.
  • TO-3 Metal Package offers superior thermal conductivity and mechanical robustness, enhancing device longevity and reliability.
  • Guaranteed hFE Range (current gain) ensures predictable amplification characteristics critical for precise circuit design.
  • JAN Military Qualification certifies the device for high-reliability applications where performance consistency is mandatory.

JANTX2N4033UB/TR Technical Specifications

ParameterSpecificationUnit
Collector-Emitter Voltage (VCEO)80V
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)5V
Collector Current, Continuous (IC)10A
Power Dissipation (PD)115W
DC Current Gain (hFE)20 to 70(at IC=4A, VCE=5V)
Transition Frequency (fT)2.5MHz
Operating Junction Temperature (TJ)-65 to +200??C

JANTX2N4033UB/TR Advantages vs Typical Alternatives

This transistor stands out due to its high current and voltage capabilities combined with military-grade reliability, making it superior for rugged industrial and defense uses. Its TO-3 metal package enhances thermal management compared to plastic-encapsulated alternatives, reducing the risk of thermal failure. The guaranteed current gain range promotes design predictability, while strict JAN qualification assures consistent performance under harsh environmental conditions.

Typical Applications

  • Power amplification stages in industrial and military radio frequency transmitters, where high current and voltage handling are essential for signal integrity and performance.
  • Switching applications in power control circuits requiring reliable operation at elevated temperatures and voltages.
  • Linear amplification in regulated power supplies and motor control circuits demanding stable transistor parameters.
  • High-reliability aerospace and defense electronic systems that mandate JAN-qualified components for mission-critical performance.

JANTX2N4033UB/TR Brand Info

The JANTX2N4033UB/TR is part of a family of military-grade bipolar transistors produced to meet stringent Joint Army-Navy (JAN) standards. These devices are manufactured under tightly controlled processes ensuring consistent quality, durability, and performance in high-stress environments. Known for their legacy in defense and aerospace applications, these transistors offer engineers trusted solutions for challenges in harsh operating conditions, supported by thorough testing and documentation.

FAQ

What is the maximum collector current for this transistor?

The device supports a maximum continuous collector current of 10 amperes, enabling it to handle substantial load currents typical in power amplification and switching applications.

What type of package does this transistor come in, and why is it important?

It is housed in a TO-3 metal can package, which provides excellent thermal dissipation and mechanical robustness, crucial for maintaining device stability and longevity in high-power applications.

Can this transistor operate at high temperatures?

Yes, it is specified to operate within a junction temperature range of -65??C to +200??C, making it suitable for demanding environments where thermal conditions can vary widely.

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产品中间询盘

What does the hFE rating indicate for this transistor?

The hFE, or DC current gain, ranges from 20 to 70 at a collector current of 4A and a collector-emitter voltage of 5V, indicating the transistor’s amplification capability and helping engineers design predictable analog circuits.

Is this transistor suitable for military applications?

Indeed, it is JAN-qualified, meaning it meets the strict reliability and performance standards required for military and aerospace applications, ensuring dependable operation under rigorous conditions.

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