JANTX2N4033UA/TR Overview
The JANTX2N4033UA/TR is a high-reliability bipolar junction transistor (BJT) designed for demanding industrial and military applications requiring robust performance under harsh conditions. This transistor offers a high collector current and a voltage rating suitable for power amplification and switching tasks. Its hermetically sealed metal can package ensures long-term stability and enhanced thermal dissipation. Engineered to meet stringent quality and reliability standards, it is an ideal choice for engineers and sourcing specialists seeking durable semiconductor components. For more detailed specifications and procurement information, visit IC Manufacturer.
JANTX2N4033UA/TR Key Features
- High Collector Current Capability: Supports continuous collector current up to 10A, enabling efficient handling of power amplification tasks.
- Robust Voltage Ratings: Collector-emitter voltage up to 60V allows operation in medium power circuits with reliable switching performance.
- Hermetically Sealed Package: The TO-39 metal can package enhances environmental protection, improving device longevity and reliability in harsh environments.
- High Gain Characteristics: Forward current gain (hFE) ranging from 20 to 70 ensures effective signal amplification in analog and digital circuits.
JANTX2N4033UA/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| Power Dissipation (PD) | 80 | W |
| DC Current Gain (hFE) | 20 ?C 70 | ?C |
| Transition Frequency (fT) | ?? 6 | MHz |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
| Package Type | TO-39 Metal Can | ?C |
JANTX2N4033UA/TR Advantages vs Typical Alternatives
This transistor offers superior reliability and power handling compared to standard plastic-encapsulated BJTs. Its hermetically sealed metal can package ensures enhanced protection against moisture and mechanical stress, making it highly suitable for aerospace, military, and industrial applications where durability is critical. The robust voltage and current ratings enable consistent performance under high load, while the wide operating temperature range supports extreme environmental conditions, providing a dependable solution versus typical alternatives.
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Typical Applications
- Power amplification in industrial control systems where high current and voltage capability are required to drive heavy loads reliably over extended periods.
- Switching applications in aerospace and military electronics, benefiting from the device??s hermetic sealing and rugged construction.
- High-reliability analog circuits, such as audio amplifiers and signal conditioning modules, that need stable gain and low noise performance.
- Temperature-critical environments requiring components that maintain electrical characteristics across a broad junction temperature range.
JANTX2N4033UA/TR Brand Info
The JANTX2N4033UA/TR is part of a trusted line of semiconductor devices specifically manufactured under stringent military standards to ensure exceptional robustness and quality. Designed for mission-critical applications, this transistor benefits from rigorous screening and qualification processes. The device??s heritage includes continuous support for rugged environments with a focus on reliability, making it a preferred choice for engineers sourcing components for long-life and high-performance systems.
FAQ
What is the maximum collector current supported by this transistor?
The transistor supports a maximum continuous collector current of 10A, making it suitable for high-power applications requiring significant current handling capability.
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What package type does the JANTX2N4033UA/TR use?
This device is housed in a TO-39 hermetically sealed metal can package, which offers enhanced environmental protection compared to plastic encapsulated alternatives.
What voltage ratings are specified for this transistor?
The collector-emitter voltage rating is 60V, collector-base voltage is 80V, and emitter-base voltage is rated at 5V, enabling operation in medium voltage power circuits.
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What is the typical gain range for this transistor?
The DC current gain (hFE) ranges from 20 to 70, providing sufficient amplification for both switching and analog signal applications.
Can this transistor operate in extreme temperature environments?
Yes, it is rated for junction temperatures from -65??C up to +200??C, making it suitable for harsh temperature conditions encountered in military and aerospace applications.
