JANTX2N3996-Transistor NPN Power Amplifier in TO-3 Package by ON Semiconductor

JANTX2N3996-Transistor Overview

The JANTX2N3996 is a high-power NPN bipolar junction transistor designed for demanding industrial and military applications. This transistor features a robust TO-3 metal can package, ensuring excellent thermal performance and mechanical durability. With a collector-emitter voltage rating of 250V and a collector current capacity of 10A, it is suitable for high voltage and high current switching tasks. The model is known for its reliable gain characteristics and fast switching speeds, ideal for amplification and power regulation in rugged environments. For sourcing and detailed specifications, visit IC Manufacturer.

JANTX2N3996-Transistor Technical Specifications

JANTX2N3996-Transistor Key Features

• High voltage and current rating: Supports up to 250V collector-emitter voltage and 10A collector current, enabling robust operation in power circuits.
• TO-3 metal package: Provides superior heat dissipation and mechanical protection, enhancing reliability in harsh industrial environments.
• Wide operating temperature range: Rated for junction temperatures up to 200??C, suitable for applications requiring thermal stability.
• Reliable gain performance: DC current gain ranging between 20 and 70 ensures consistent amplification and switching behavior.

Typical Applications

• Power amplifiers in industrial and military-grade electronic equipment, where high voltage and current handling are essential for system stability and performance.
• Switching regulators and power control circuits that demand efficient transistor operation at elevated temperatures.
• Class B and AB audio amplifier outputs requiring robust devices capable of handling significant power dissipation.
• Motor control drivers and solenoid drivers in automation systems, benefiting from the transistor??s high current capacity and rugged packaging.

JANTX2N3996-Transistor Advantages vs Typical Alternatives

This transistor offers a compelling advantage over typical small-signal or lower power transistors due to its high collector current and voltage ratings combined with a robust TO-3 package. This ensures enhanced thermal management and mechanical durability, making it a preferred choice for high-power amplification and switching applications. Its stable gain and wide operating temperature range provide reliable performance where alternative transistors may fail or require additional cooling solutions.

JANTX2N3996-Transistor Brand Info

The JANTX2N3996 is a military-grade transistor variant originally specified under JEDEC standards and manufactured by various semiconductor companies specializing in high-reliability components. The “JAN” prefix indicates compliance with Joint Army-Navy (military) quality standards, ensuring rigorous testing for performance and durability. This device is commonly sourced from established suppliers that provide products meeting strict military and aerospace requirements, making it suitable for defense and industrial control applications demanding certified reliability.

FAQ

What are the maximum voltage ratings for the JANTX2N3996 transistor?

The transistor supports a maximum collector-emitter voltage of 250 volts, a collector-base voltage of 350 volts, and an emitter-base voltage of 7 volts. These ratings make it suitable for high-voltage power switching applications.

How much current can the transistor safely handle?

This device can handle a continuous collector current up to 10 amperes, allowing it to manage substantial power levels in demanding switching and amplification roles.