JANTX2N3868-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

JANTX2N3868-Transistor Overview

The JANTX2N3868 is a high-power NPN bipolar junction transistor designed for demanding linear and switching applications. Engineered for robust performance, it offers a collector current rating of up to 10A and a collector-emitter voltage of 60V, making it well-suited for power amplifier circuits and high-reliability industrial systems. This transistor features a complementary balance of gain and power dissipation that ensures stable operation under elevated thermal conditions. Manufactured under stringent quality standards, it provides consistent electrical characteristics and long-term durability. For sourcing or detailed technical inquiries, visit IC Manufacturer.

JANTX2N3868-Transistor Key Features

• High collector current capacity: Supports up to 10A continuous current, enabling efficient handling of power in high-load applications.
• Voltage tolerance: Collector-emitter voltage rating of 60V ensures reliable operation in moderate voltage environments.
• Power dissipation: Maximum power dissipation of 125W enhances thermal management, allowing for sustained performance without overheating.
• Low saturation voltage: Minimizes conduction losses, improving overall circuit efficiency and reducing heat generation.

JANTX2N3868-Transistor Technical Specifications

JANTX2N3868-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and power dissipation compared to many standard NPN transistors, enabling it to operate reliably in high-power environments. Its low saturation voltage reduces conduction losses, which enhances efficiency in power amplification and switching. The device??s robust voltage ratings and gain characteristics provide engineers with a dependable option for industrial and military-grade applications, ensuring enhanced performance and longevity.

Typical Applications

• Power amplifier circuits requiring high current and voltage handling capability, ensuring stable amplification with minimal distortion.
• Switching regulators and power converters where efficient high-current switching is critical for system performance.
• Industrial control systems that demand reliable transistor operation under harsh conditions and extended duty cycles.
• Audio amplifier stages in professional and consumer equipment, benefiting from the device??s linearity and power handling.

JANTX2N3868-Transistor Brand Info

The JANTX2N3868 transistor is recognized for its adherence to military and industrial standards, ensuring high reliability and consistent performance. As a product typically distributed by established semiconductor manufacturers, this transistor has become a benchmark for high-power NPN devices. It is widely used in applications that require rugged components capable of sustaining demanding electrical and environmental stresses.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current rating is 10 amperes, allowing the transistor to handle substantial load currents in power amplification and switching applications without performance degradation.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, this transistor is suitable for moderate high-frequency applications, including RF and switching circuits where gain at higher frequencies is necessary.

What is the maximum power dissipation of the transistor?

This device supports a maximum power dissipation of 125 watts, ensuring it can manage thermal loads effectively when combined with appropriate heat sinking and cooling measures.

How does the transistor??s voltage rating impact its application?

The collector-emitter voltage rating of 60V and collector-base voltage of 80V enable the transistor to operate safely within moderate voltage environments, protecting against breakdown and improving reliability in power circuits.

Is the DC current gain consistent across all units?

The DC current gain (hFE) typically ranges from 40 to 160, depending on operating conditions and manufacturing variations. This range allows for flexibility in circuit design while ensuring reliable transistor switching and amplification.