JANTX2N3867P-Transistor-PIND Overview
The JANTX2N3867P is a high-performance PNP transistor designed for industrial and military-grade applications, offering robust switching and amplification capabilities. Engineered with a PIND (Plastic Injection Molded Device) package, it ensures reliable operation under demanding conditions, including elevated temperatures and mechanical stress. This transistor delivers consistent gain characteristics and voltage ratings suitable for precision analog circuits and power control systems. Sourcing specialists and engineers will appreciate its compliance with stringent quality standards and its suitability in environments requiring enhanced reliability. For detailed specifications and sourcing options, visit IC Manufacturer.
JANTX2N3867P-Transistor-PIND Key Features
- High voltage rating: Supports collector-emitter voltages up to 60 V, enabling use in medium-power switching and amplification tasks.
- Robust current handling: Capable of continuous collector current up to 3 A, providing flexibility for power control and driver stages.
- Thermally stable PIND packaging: Ensures enhanced thermal dissipation and mechanical resilience for long-term reliability in industrial environments.
- Consistent gain performance: Offers a DC current gain (hFE) range that supports linear amplification applications with predictable behavior.
JANTX2N3867P-Transistor-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | – |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current Continuous (IC) | 3 | A |
| Power Dissipation (Ptot) | 30 | W |
| DC Current Gain (hFE) | 40 to 160 | – |
| Transition Frequency (fT) | 40 | MHz |
| Operating Junction Temperature (Tj) | -65 to +200 | ??C |
| Package Type | PIND (TO-39 style) | – |
JANTX2N3867P-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to many standard PNP devices, ensuring reliable operation in high-stress industrial settings. Its plastic injection molded (PIND) packaging enhances thermal management and mechanical durability, reducing failure rates under temperature cycling and vibration. These features make it a preferred choice over typical transistors lacking such ruggedization, delivering improved system reliability and consistent performance in power amplification and switching roles.
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Typical Applications
- Industrial power control circuits requiring a robust PNP transistor capable of handling elevated voltages and currents with stable gain performance.
- Amplifier stages in analog and audio frequency circuits where linearity and thermal stability are critical.
- Military and aerospace equipment demanding high reliability and extended temperature operation.
- Switching applications in automotive or industrial automation environments exposed to mechanical stress and temperature variations.
JANTX2N3867P-Transistor-PIND Brand Info
The JANTX2N3867P transistor is a product adhering to military-grade quality standards, manufactured under strict process controls to ensure reliability in harsh environments. Packaged in a PIND housing, it reflects a commitment to durable semiconductor solutions. This transistor line is widely recognized in defense and industrial sectors for delivering consistent performance, high gain, and robust electrical characteristics, making it a trusted component for critical system designs.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current for this transistor is 3 amperes, allowing it to handle moderate power levels suitable for switching and amplification in various industrial applications.
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What voltage levels can the transistor withstand?
This device supports collector-emitter and collector-base voltages up to 60 volts, providing ample headroom for medium-voltage circuit designs requiring reliable switching or amplification.
What are the benefits of the PIND package for this transistor?
The Plastic Injection Molded Device (PIND) package enhances thermal dissipation and mechanical robustness, improving the transistor??s ability to withstand temperature stress, vibration, and mechanical shock common in industrial and military environments.
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Is this transistor suitable for high-frequency applications?
With a transition frequency of approximately 40 MHz, this transistor is well-suited for many analog and switching applications but may not be optimal for very high-frequency RF circuits requiring higher transition frequencies.
What is the operating temperature range for this device?
The transistor operates reliably within a junction temperature range from -65??C to +200??C, making it suitable for demanding environments with wide temperature fluctuations often encountered in industrial and defense systems.
