JANTX2N3810U-Dual-Transistor by JAN – High Power Amplifier Transistor, TO-39 Package

  • This dual-transistor device enables efficient signal amplification and switching for electronic circuits.
  • Its high voltage rating ensures reliable operation in demanding power management applications.
  • The compact TO-39 metal can package offers durability while saving board space in tight layouts.
  • Ideal for audio amplifier stages where consistent performance and low distortion are critical.
  • Manufactured to meet stringent quality standards, ensuring long-term stability under varied conditions.
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JANTX2N3810U-Dual-Transistor Overview

The JANTX2N3810U dual transistor is a military-grade bipolar junction transistor (BJT) designed for high-reliability applications requiring robust performance under demanding conditions. Featuring complementary NPN and PNP transistor pairs in a single package, it offers compact integration and precise switching capabilities. This device supports moderate voltage and current levels, making it suitable for amplification and switching tasks in aerospace, defense, and industrial control systems. Manufactured to stringent JEDEC standards, the dual transistor ensures consistent electrical characteristics and enhanced durability. For sourcing reliable, high-performance semiconductor components, the JANTX2N3810U is an optimal choice. More information is available at IC Manufacturer.

JANTX2N3810U-Dual-Transistor Key Features

  • Dual complementary transistor pair: Integrates both NPN and PNP transistors, reducing board space and simplifying circuit design.
  • Military-grade reliability: Qualified to stringent JAN (Joint Army-Navy) specifications, suitable for mission-critical applications.
  • High voltage and current ratings: Supports collector-emitter voltages up to 100 V and collector currents up to 1 A, enabling versatile power handling.
  • Thermally stable construction: Ensures consistent performance across a wide temperature range, improving system reliability in harsh environments.

JANTX2N3810U-Dual-Transistor Technical Specifications

Parameter Value
Transistor Type Complementary NPN & PNP
Collector-Emitter Voltage (Vceo) 100 V
Collector Current (Ic) 1 A
Power Dissipation (Pd) 1 W (per transistor)
DC Current Gain (hFE) 40 to 160 (typical)
Transition Frequency (fT) 40 MHz (typical)
Operating Temperature Range -55??C to +125??C
Package Type TO-18 Metal Can

JANTX2N3810U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers enhanced integration by combining complementary transistor types in one package, reducing PCB complexity and improving signal matching. Its military-grade qualification guarantees superior reliability and thermal stability compared to commercial-grade devices. With robust voltage and current ratings, it provides versatility for various demanding applications, making it a preferred solution for engineers requiring dependable performance under rigorous environmental and electrical stresses.

Typical Applications

  • High-reliability analog amplification circuits in aerospace and defense systems, where compactness and matched transistor pairs enhance signal integrity.
  • Switching and driver circuits in industrial control equipment requiring durable and thermally stable components.
  • Complementary output stages in precision audio amplifiers and instrumentation amplifiers.
  • General-purpose signal processing where a matched dual transistor simplifies design and reduces component count.

JANTX2N3810U-Dual-Transistor Brand Info

The JANTX2N3810U dual transistor is produced under the JAN (Joint Army-Navy) designation, signifying strict adherence to military standards for semiconductor devices. This brand is synonymous with high-quality, ruggedized components engineered to withstand harsh environments and extended operational lifetimes. The product line aligns with industry expectations for reliability and performance, making it a trusted choice among military, aerospace, and industrial electronics engineers worldwide.

FAQ

What is the maximum collector current rating for this dual transistor?

The maximum collector current for each transistor within the dual device is rated at 1 ampere, allowing it to handle moderate power levels suitable for amplification and switching tasks in various applications.

Can this transistor operate at elevated temperatures?

Yes, the device is qualified to operate across a wide temperature range from -55??C to +125??C, ensuring reliable performance in harsh and demanding thermal environments typical of military and industrial settings.

What type of package does this dual transistor come in?

The unit is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, contributing to the device??s ruggedness and long-term stability.

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How does the complementary transistor pair benefit circuit design?

Having both NPN and PNP transistors integrated in one package simplifies circuit layouts by reducing the number of discrete components, improving matching characteristics and overall circuit compactness, which is critical in high-reliability applications.

Is this transistor suitable for high-frequency applications?

With a typical transition frequency (fT) of 40 MHz, the device is well-suited for moderate frequency analog and switching applications, though it may not be optimal for very high-frequency RF designs requiring GHz-range performance.

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