JANTX2N3725-Transistor NPN Power Amplifier TO-3 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient control of current in various circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package design allows for space-saving integration on crowded circuit boards.
  • Ideal for switching applications, it helps manage power delivery in automotive or industrial electronics.
  • Manufactured to meet stringent quality standards, it offers dependable operation over extended use.
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JANTX2N3725-Transistor Overview

The JANTX2N3725 is a high-performance bipolar junction transistor (BJT) designed for demanding switching and amplification applications in industrial and military-grade electronics. Featuring a silicon NPN structure, this transistor offers robust voltage and current handling capabilities, ensuring reliable operation under elevated stress conditions. It is constructed to meet stringent JAN (Joint Army-Navy) quality standards, making it suitable for aerospace, defense, and other critical environments. With a collector-emitter voltage rating of 100V and a collector current capacity of 10A, this device balances power efficiency and ruggedness. For sourcing and detailed information, visit IC Manufacturer.

JANTX2N3725-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Silicon
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 115 W
DC Current Gain (hFE) 20 to 70
Transition Frequency (fT) 4 MHz
Operating Junction Temperature (TJ) -65 to +200 ??C

JANTX2N3725-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling robust switching for power-intensive applications.
  • Elevated voltage ratings: With 100V collector-emitter and collector-base voltages, it withstands high-voltage circuit demands.
  • Wide operating temperature range: Reliable performance from -65??C to +200??C, ideal for harsh environments and military use.
  • JAN quality standard compliance: Ensures enhanced reliability, durability, and conformity to strict military specifications.
  • Moderate gain bandwidth: Transition frequency of 4 MHz supports moderate-speed switching and amplification tasks.
  • High power dissipation capability: Rated at 115W, it can handle significant thermal loads with appropriate heat sinking.

Typical Applications

  • Power Amplification: Suitable for linear and switching amplifiers in industrial controls where high current and voltage are essential.
  • Military Electronics: Designed to meet stringent military standards, ideal for avionics and defense communication systems.
  • Switching Regulators: Used in power conversion circuits requiring rugged transistors capable of fast switching and high power handling.
  • Motor Control Circuits: Effective for driving motors and actuators with high current demands in harsh industrial environments.

JANTX2N3725-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its combination of high current and voltage ratings alongside a wide temperature range, making it superior for robust industrial and military applications. Compared to typical silicon BJTs, it offers enhanced reliability through JAN certification, ensuring consistent performance under extreme conditions. Its power dissipation capacity allows for sustained operation without thermal failure, while the moderate gain bandwidth supports diverse switching and amplification needs efficiently.

JANTX2N3725-Transistor Brand Info

The JANTX2N3725 transistor is commonly manufactured by established suppliers specializing in military-grade semiconductor components

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