JANTX2N3700UB-Transistor NPN Power Transistor in TO-220 Package by JAN

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a high voltage rating, ensuring stable performance under demanding electrical conditions.
  • The compact package design helps save board space, making it suitable for dense circuit layouts.
  • Ideal for use in switching applications, it improves response times and overall circuit efficiency.
  • Manufactured to meet strict quality standards, it offers consistent reliability in long-term operation.
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产品上方询盘

JANTX2N3700UB-Transistor Overview

The JANTX2N3700UB is a high-quality bipolar junction transistor (BJT) designed for reliable switching and amplification in military and industrial applications. This transistor exhibits a robust gain bandwidth product and can operate efficiently under demanding environmental conditions. With a collector-emitter voltage rating suitable for medium power circuits, it provides consistent performance in linear and switching modes. Its metal can package offers excellent thermal dissipation, ensuring long-term stability in critical systems. Sourcing this transistor from a trusted IC Manufacturer guarantees compliance with military standards and superior device reliability.

JANTX2N3700UB-Transistor Key Features

  • High voltage capability: Supports collector-emitter voltages up to 100 V, enabling use in medium-power amplification and switching applications.
  • Moderate current handling: Collector current rating of up to 200 mA ensures suitability for control circuits requiring reliable current flow.
  • Excellent gain characteristics: Provides a DC current gain (hFE) range that optimizes signal amplification and switching precision.
  • Hermetic metal can package: Enhances thermal management and mechanical protection, critical for harsh environments and military-grade applications.

JANTX2N3700UB-Transistor Technical Specifications

ParameterValueUnits
Collector-Emitter Voltage (VCEO)100V
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)200mA
DC Current Gain (hFE)40 to 300(typical range)
Power Dissipation (Ptot)625mW
Transition Frequency (fT)100MHz
Operating Temperature Range-55 to +200??C
Package TypeHermetic Metal Can (TO-18)?C

JANTX2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor stands out for its combination of high voltage tolerance and moderate current handling, making it more versatile than many standard small-signal BJTs. Its hermetic metal can package improves thermal dissipation and environmental durability, offering superior reliability in military and aerospace systems compared to plastic-encapsulated alternatives. These factors contribute to more stable performance, longer device lifespan, and enhanced integration in precision industrial circuits.

Typical Applications

  • Signal amplification in military communication and radar systems, where stable gain and reliability under temperature extremes are essential.
  • Switching elements in power control circuits requiring a medium-voltage transistor with robust packaging.
  • Low-noise amplifiers for sensor signal conditioning in aerospace instrumentation.
  • General-purpose amplification and switching in industrial automation and control systems.

JANTX2N3700UB-Transistor Brand Info

The JANTX2N3700UB is a military-grade transistor manufactured to meet stringent reliability and performance standards. It is part of a product line known for rugged design and consistent electrical characteristics, tailored for defense and aerospace applications. This product is sourced from established suppliers committed to quality assurance and compliance with MIL-STD specifications, making it a trusted choice for engineers and sourcing specialists requiring dependable semiconductor components.

FAQ

What are the key electrical ratings of the JANTX2N3700UB transistor?

The transistor features a maximum collector-emitter voltage of 100 V, a collector current rating of 200 mA, and a power dissipation capacity of 625 mW. It operates efficiently within a broad temperature range from -55??C to +200??C, suitable for harsh environments.

What type of package does this transistor use, and why is it important?

This device is housed in a hermetic metal can package (TO-18), which provides superior heat dissipation and mechanical protection. This packaging ensures enhanced reliability, especially in demanding military and aerospace applications where environmental factors can affect performance.

How does the current gain (hFE) vary in this transistor?

The DC current gain typically ranges from 40 to 300, depending on operating conditions. This wide gain range allows for flexible use in both amplification and switching circuits, providing engineers with adaptable performance parameters.

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产品中间询盘

Is the JANTX2N3700UB suitable for high-frequency applications?

Yes, with a transition frequency (fT) around 100 MHz, this transistor can be effectively used in moderate-frequency circuits, including RF amplification and switching roles where speed is a factor.

What industries commonly use this transistor, and why?

This transistor is widely used in military, aerospace, and industrial sectors due to its rugged design, stable electrical characteristics, and compliance with military standards. Its reliability under extreme conditions makes it ideal for critical communication, control, and sensing applications.

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