JANTX2N3637UB-Transistor NPN Power Transistor in TO-220 Package by JANTX

  • This transistor controls current flow efficiently, enabling precise switching and amplification in electronic circuits.
  • It features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • The compact package design allows for easy integration on crowded circuit boards, saving valuable space.
  • Commonly used in power regulation modules, it improves energy management and system performance.
  • Manufactured to meet strict quality standards, it offers consistent reliability over extended use.
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JANTX2N3637UB-Transistor Overview

The JANTX2N3637UB is a high-performance NPN bipolar junction transistor designed for use in military and aerospace applications requiring robust reliability and tightly controlled electrical characteristics. This transistor offers dependable switching and amplification capabilities under extreme environmental conditions, making it suitable for high-reliability electronic assemblies. Engineered for ruggedness and stable operation, the device meets stringent JEDEC and MIL-PRF-19500 standards, ensuring consistent performance throughout its lifecycle. For sourcing and engineering professionals, this transistor provides a trusted solution in critical circuit designs where durability and precision are paramount. More details can be found at IC Manufacturer.

JANTX2N3637UB-Transistor Key Features

  • High Voltage Rating: Supports collector-emitter voltages up to 160V, enabling use in circuits with demanding voltage requirements.
  • Robust Current Handling: Capable of continuous collector current up to 10A, ensuring reliable operation in power amplification and switching roles.
  • Military-Grade Qualification: Meets MIL-PRF-19500 standards, guaranteeing superior performance in harsh environments with temperature ranges from -65??C to +200??C.
  • Low Saturation Voltage: Provides efficient switching with minimal power loss, enhancing overall system efficiency.

JANTX2N3637UB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 160 V
Collector-Base Voltage (VCBO) 200 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current Continuous (IC) 10 A
Power Dissipation (Ptot) 115 W
DC Current Gain (hFE) 30 to 100
Transition Frequency (fT) 6 MHz (typical)
Operating Temperature Range -65??C to +200??C
Package Type TO-3 Metal Can

JANTX2N3637UB-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high voltage and current ratings combined with military-grade qualification, providing unmatched reliability and performance in extreme temperature environments. Compared to standard commercial transistors, it offers enhanced durability and tighter electrical parameter control, making it ideal for critical aerospace and defense applications that demand long-term operation without compromise.

Typical Applications

  • Power amplification in aerospace and military communication systems where consistent linearity and reliability are critical for signal integrity.
  • High-voltage switching circuits requiring robust transistors capable of handling significant collector currents under harsh conditions.
  • Defense electronics including radar and guided missile systems benefiting from the transistor??s rugged construction and stable gain characteristics.
  • Industrial control and power regulation modules exposed to wide temperature ranges and demanding operational stresses.

JANTX2N3637UB-Transistor Brand Info

The JANTX2N3637UB transistor is manufactured under stringent military standards, ensuring compliance with MIL-PRF-19500. This brand is recognized for delivering high-reliability discrete semiconductors tailored for defense and aerospace markets. The product is produced using rigorous quality controls and testing protocols, confirming its suitability for critical applications that require long-term stability, radiation resistance, and thermal endurance. This brand??s focus on rugged, high-performance transistors supports engineers in developing dependable systems that withstand demanding operational environments.

FAQ

What is the maximum collector current rating of the JANTX2N3637UB transistor?

The transistor can continuously handle a collector current of up to 10 amperes, making it suitable for high-power switching and amplification applications. This rating ensures reliable operation without thermal or electrical overstress under specified conditions.

Which package type is used for this transistor and why is it important?

This device is housed in a TO-3 metal can package, offering excellent thermal dissipation and mechanical robustness. This package is essential for maintaining performance stability in high-power and high-temperature environments typical of military and aerospace systems.

What temperature range can this transistor operate within?

The JANTX2N3637UB supports an operating temperature range from -65??C up to +200??C. This extensive range meets the stringent requirements of harsh industrial and defense applications, ensuring functionality in extreme cold and heat.

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How does the transistor??s voltage rating impact its application scope?

With a collector-emitter voltage rating of 160 volts and collector-base voltage of 200 volts, this transistor can be used in circuits requiring high voltage tolerance. This capacity allows engineers to design systems that operate safely under elevated voltage conditions without risking device failure.

Is this transistor suitable for commercial consumer electronics?

This transistor is primarily designed and qualified for military and aerospace uses, focusing on high reliability and ruggedness. While it can function in commercial electronics, its specifications and cost make it more appropriate for critical and demanding industrial applications rather than general consumer products.

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