JANTX2N3636UB-Transistor Overview
The JANTX2N3636UB is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring superior reliability and robust operation under extreme conditions. This transistor is engineered to deliver high current gain and low saturation voltage, making it an excellent choice for switching and amplification tasks in demanding environments. Its hermetic metal can package ensures enhanced durability and thermal stability, providing consistent performance over a wide temperature range. Available from IC Manufacturer, this device meets stringent JEDEC and MIL-STD quality standards, ensuring dependable operation in critical industrial systems.
JANTX2N3636UB-Transistor Key Features
- High Current Gain: Provides efficient amplification with a minimum DC current gain (hFE) of 40, improving signal integrity and reducing power consumption.
- Low Collector-Emitter Saturation Voltage: Allows for efficient switching with VCE(sat) typically at 1.5 V, minimizing power losses in high-current circuits.
- High Collector Current Capability: Rated for a maximum continuous collector current of 10 A, supporting high-power applications without compromising device reliability.
- Wide Operating Temperature Range: Functional from -65??C to +200??C, suitable for harsh environments encountered in aerospace and military systems.
JANTX2N3636UB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor | |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 200 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current Continuous (IC) | 10 | A |
| Power Dissipation (PC) | 115 | W |
| DC Current Gain (hFE) | 40 (min) | |
| Transition Frequency (fT) | 2.5 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
| Package Type | Hermetic Metal Can (TO-3) |
JANTX2N3636UB-Transistor Advantages vs Typical Alternatives
Compared to typical transistors, this device offers enhanced thermal stability and a higher maximum collector current, enabling superior performance in high-power switching and amplification roles. Its hermetic packaging improves environmental resistance, reducing failure rates in rugged applications. The combination of low saturation voltage and robust gain ensures efficient power management, making it a reliable choice over standard commercial-grade transistors.
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Typical Applications
- High-reliability power switching circuits in military and aerospace systems where thermal stability and durability are critical.
- Linear and switching amplifiers requiring robust gain and low saturation voltage to maintain signal quality.
- Industrial control systems operating under extreme temperature ranges with high current demands.
- Power regulation modules in defense electronics benefiting from the transistor??s high power dissipation capability.
JANTX2N3636UB-Transistor Brand Info
This transistor belongs to the JANTX series, a line of devices manufactured to meet military-grade quality and performance standards. The JANTX2N3636UB is produced under strict quality controls to ensure reliability in mission-critical applications. Its design and construction follow JEDEC and MIL-STD certifications, offering engineers confidence in its long-term operational integrity. This product exemplifies the manufacturer’s commitment to delivering durable, high-performance semiconductor solutions for demanding industrial and defense markets.
FAQ
What type of transistor is the JANTX2N3636UB?
The device is an NPN bipolar junction transistor (BJT) designed for high-power applications, typically used in switching and amplification circuits requiring robust performance and reliability.
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What is the maximum collector current supported by this transistor?
This transistor can handle a continuous collector current of up to 10 amperes, making it suitable for high-current industrial and military applications.
What are the operating temperature limits for this transistor?
It operates reliably within a wide temperature range from -65??C to +200??C, which allows it to function effectively in harsh and extreme environmental conditions.
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How does the hermetic metal can package benefit the device?
The hermetic metal can (TO-3) package provides superior protection against moisture, contaminants, and mechanical stress, enhancing thermal dissipation and overall device durability in critical applications.
What is the typical collector-emitter saturation voltage, and why is it important?
The typical collector-emitter saturation voltage is about 1.5 volts. A low saturation voltage is essential because it reduces power loss during switching, improving efficiency and minimizing heat generation in high-current circuits.
