JANTX2N3635UB-Transistor Power Amplifier NPN Bipolar Transistor in TO-220 Package

  • This transistor amplifies electrical signals efficiently, enabling improved circuit performance and control.
  • Featuring a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • The compact package reduces board space, allowing for denser and more versatile circuit designs.
  • Ideal for switching applications, it supports reliable operation in power management systems and signal processing.
  • Manufactured to meet rigorous quality standards, it offers consistent performance and long-term reliability.
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JANTX2N3635UB-Transistor Overview

The JANTX2N3635UB transistor is a high-performance silicon NPN bipolar junction transistor (BJT) designed for use in medium-power switching and amplification applications. It features robust electrical characteristics, including a voltage rating suitable for demanding environments and a stable gain profile, making it ideal for military and aerospace-grade circuits. This transistor complies with JAN (Joint Army-Navy) quality standards, ensuring enhanced reliability and consistency. Engineers and sourcing specialists will appreciate its rugged construction and proven track record in industrial and defense systems. For more detailed product availability and support, visit IC Manufacturer.

JANTX2N3635UB-Transistor Key Features

  • High Voltage Handling: Rated for a collector-emitter voltage of 100 V, enabling its use in circuits requiring robust voltage tolerance and protection against voltage spikes.
  • Strong Collector Current Capability: Supports a continuous collector current up to 10 A, ensuring reliable operation in medium-power amplification and switching tasks.
  • Military-Grade Reliability: Manufactured to JAN specifications, providing enhanced durability and performance consistency in harsh conditions.
  • Complementary Package: TO-3 metal can package offers excellent thermal dissipation and mechanical stability, essential for high-reliability applications.

JANTX2N3635UB-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor ?C
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 40 – 160 ?C
Package TO-3 Metal Can ?C
Transition Frequency (fT) 4 MHz

JANTX2N3635UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to typical low-power BJTs, making it well-suited for high-reliability industrial and defense applications. Its JAN-grade certification ensures enhanced quality control and long-term stability under thermal and electrical stress. The TO-3 package facilitates efficient heat dissipation, providing reliability advantages over plastic-encapsulated alternatives, especially in power switching and amplification circuits.

Typical Applications

  • Power amplification in military and aerospace communication equipment, where ruggedness and consistent gain are critical for signal integrity.
  • Switching devices in industrial control systems that require high voltage and current capacity to handle inductive loads.
  • High-reliability electronic assemblies in avionics and defense systems demanding strict quality standards and long service life.
  • General-purpose medium-power amplification tasks in ruggedized electronics designed for harsh environments.

JANTX2N3635UB-Transistor Brand Info

The JANTX2N3635UB transistor is part of a legacy line of semiconductor devices manufactured under stringent military standards by trusted suppliers specializing in high-reliability components. The JAN designation indicates compliance with Joint Army-Navy specifications, reflecting rigorous testing for temperature, voltage, and mechanical stress. This transistor is recognized for consistent performance in demanding applications, offering engineers and procurement teams a dependable solution for critical system designs.

FAQ

What does the JAN designation mean for this transistor?

JAN stands for Joint Army-Navy, indicating that the transistor meets strict military quality and reliability standards. This ensures the device performs consistently under harsh environmental and electrical conditions, making it suitable for defense and aerospace applications.

What package type does the transistor use, and why is it important?

This transistor is housed in a TO-3 metal can package. The TO-3 offers excellent thermal conductivity and mechanical robustness, which helps dissipate heat effectively and enhances reliability in high-power applications.

What are the maximum voltage ratings for this transistor?

The device features a maximum collector-emitter voltage of 100 V and a collector-base voltage rating of 120 V. These ratings enable it to withstand significant voltage stress in switching and amplification circuits.

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How much collector current can the transistor safely handle?

The transistor supports a continuous collector current of up to 10 amperes, allowing it to manage medium-power loads effectively without compromising performance or reliability.

In which applications is this transistor typically used?

Common applications include power amplification in military communications, switching in industrial controls, and use in avionics and defense electronics where high reliability and stable operation are essential.

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