JANTX2N3635UB/TR Transistor NPN Power Amplifier – JANTX2N3635UB/TR TO-3 Package

  • Acts as a high-voltage transistor, enabling efficient control of electrical signals in circuits.
  • Supports a specific voltage rating that ensures stability under demanding operating conditions.
  • Features a compact package that allows for board-space savings and easier integration.
  • Suitable for power regulation tasks, improving overall system performance in electronic devices.
  • Manufactured to meet industry standards, providing consistent reliability in various environments.
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JANTX2N3635UB/TR Overview

The JANTX2N3635UB/TR is a rugged, high-performance NPN bipolar junction transistor designed for demanding industrial and military applications. It features a high voltage rating and robust current handling capabilities, making it suitable for power amplification and switching tasks in harsh environments. This transistor meets stringent quality and reliability standards, ensuring consistent operation under extreme conditions. Ideal for engineers and sourcing specialists seeking durable, high-reliability components, this device is offered through IC Manufacturer with traceable military-grade certification and packaging for secure deployment in critical systems.

JANTX2N3635UB/TR Key Features

  • High Voltage Rating: With a collector-emitter voltage of 300V, it supports high-voltage switching and amplification, essential for industrial power applications.
  • Robust Collector Current Handling: The transistor manages collector currents up to 10A, enabling efficient control of power loads in demanding circuits.
  • Military-Grade Reliability: Designed to meet JAN (Joint Army-Navy) specifications, it guarantees performance under extreme temperature and stress conditions.
  • Low Saturation Voltage: Enables reduced power dissipation, improving energy efficiency and thermal management in electronic systems.

JANTX2N3635UB/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (V_CE) 300 V
Collector-Base Voltage (V_CB) 450 V
Emitter-Base Voltage (V_EB) 7 V
Collector Current (Continuous) (I_C) 10 A
Power Dissipation (P_D) 125 W
Gain Bandwidth Product (f_T) 6 MHz
DC Current Gain (h_FE) 25 to 70
Operating Junction Temperature -65 to +200 ??C
Package Type TO-3

JANTX2N3635UB/TR Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to typical commercial-grade devices, making it highly suitable for rugged and high-power applications. Its military-grade certification ensures enhanced reliability, sensitivity to thermal stress, and long-term operational stability. The efficient low saturation voltage reduces power loss, optimizing overall system performance and extending component lifespan under challenging conditions.

Typical Applications

  • Power Amplifiers in industrial control systems requiring high voltage and current handling to drive heavy loads reliably and efficiently.
  • Switching regulators and power converters where robust operation at elevated temperatures is critical for system stability.
  • Military and aerospace electronics demanding components with proven reliability under extreme environmental stress.
  • Motor control circuits that benefit from the transistor??s high current capacity and thermal resilience for continuous operation.

JANTX2N3635UB/TR Brand Info

The JANTX2N3635UB/TR is part of a series of transistors manufactured to meet stringent Joint Army-Navy (JAN) standards, ensuring compliance with military-grade specifications. This product is packaged in a TO-3 metal can, providing durable physical protection and excellent thermal conductivity. The brand is recognized for delivering high-quality, reliable semiconductors tailored for industrial and defense sectors requiring proven performance and traceability.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current rating is 10A, allowing it to handle significant power loads in industrial and military applications without degradation.

What type of package does this transistor use, and why is it important?

This transistor is housed in a TO-3 metal can package, which offers superior heat dissipation and mechanical robustness, critical for maintaining performance in harsh environments.

How does the voltage rating of this transistor affect its application scope?

With a collector-emitter voltage rating of 300V and collector-base voltage of 450V, this device is suitable for high-voltage power switching and amplification tasks, expanding its use in heavy-duty industrial circuits.

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Can this transistor operate at extreme temperatures?

Yes, it supports an operating junction temperature range from -65??C up to +200??C, making it ideal for applications exposed to wide temperature variations, such as aerospace or military systems.

What distinguishes this transistor??s gain characteristics?

The DC current gain (h_FE) ranges from 25 to 70, providing adequate amplification while maintaining stability and efficiency in power control applications, balancing gain with reliability.

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