JANTX2N3635L-Transistor Overview
The JANTX2N3635L is a high-performance NPN bipolar junction transistor designed for military and aerospace applications, featuring rugged construction and excellent electrical characteristics. This silicon transistor delivers a collector current (Ic) of up to 10 Amperes and a collector-emitter voltage (Vceo) rating of 100 Volts, ensuring reliable operation under demanding conditions. Its low saturation voltage and high current gain make it ideal for switching and amplification in high-reliability environments. With compliance to JAN (Joint Army-Navy) standards, the device meets stringent quality controls for durability and performance. For detailed sourcing and technical support, visit IC Manufacturer.
JANTX2N3635L-Transistor Key Features
- High Collector Current Capacity: Supports up to 10 A, enabling robust power handling in switching applications.
- Wide Voltage Rating: Collector-emitter voltage rating of 100 V ensures suitability for medium power circuits requiring reliability.
- Military-Grade Quality: Constructed to meet JAN specifications, providing enhanced durability and long-term stability in harsh environments.
- Low Saturation Voltage: Minimizes power losses and improves efficiency in switching circuits.
- High Current Gain (hFE): Offers gain values typically between 20 and 70, optimizing amplification performance.
- Glass-Passivated Junctions: Improves thermal stability and reduces leakage currents under high-stress conditions.
- TO-3 Metal Can Package: Provides excellent heat dissipation, crucial for high power and temperature applications.
JANTX2N3635L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector Current (Ic) | 10 | A |
| Power Dissipation (Pc) | 115 | W |
| DC Current Gain (hFE) | 20 to 70 | ?? |
| Transition Frequency (fT) | ?? | MHz (typically ?? 3 MHz) |
| Saturation Voltage (Vce(sat)) | 2.0 (max) | V |
| Operating Junction Temperature (Tj) | -65 to +200 | ??C |
| Package Type | TO-3 Metal Can | ?? |
JANTX2N3635L-Transistor Advantages vs Typical Alternatives
This transistor stands out by combining high current capacity with military-grade reliability, making it superior for applications requiring robust switching under extreme environmental conditions. Its low saturation voltage improves power efficiency compared to standard transistors. The TO-3 metal can package enhances thermal management, increasing longevity and consistent performance. These qualities make the device an excellent alternative for engineers seeking durable and efficient transistors for aerospace and defense systems.
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Typical Applications
- Power switching circuits in aerospace and military systems where reliability and high current handling are critical.
- Linear amplification stages in rugged industrial equipment requiring stable gain over wide temperature ranges.
- High-power regulators and motor control circuits that demand efficient heat dissipation and robust performance.
- General-purpose power amplification and switching in harsh environments including avionics and communication equipment.
JANTX2N3635L-Transistor Brand Info
The JANTX2N3635L is a military-grade transistor produced under stringent Joint Army-Navy (JAN) standards, ensuring high reliability and performance consistency. This product is an integral part of IC Manufacturer??s portfolio of rugged semiconductor components, designed specifically for defense and aerospace applications. The brand is recognized for its commitment to quality, environmental stress screening, and extended lifecycle support, meeting the rigorous demands of industrial and military sectors.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current is rated at 10 Amperes, allowing the transistor to handle significant power loads suitable for demanding switching and amplification tasks.
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What voltage levels can the JANTX2N3635L transistor safely operate at?
This transistor supports a maximum collector-emitter voltage of 100 Volts, making it suitable for medium power applications requiring stable operation under higher voltage stress.
How does the package type affect the transistor??s performance?
The TO-3 metal can package enhances heat dissipation, improving thermal management and enabling the transistor to operate safely at higher power levels and temperatures.
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What makes this transistor suitable for military and aerospace applications?
The device complies with JAN standards, ensuring enhanced durability, environmental resistance, and consistent electrical performance under harsh conditions typical in military and aerospace environments.
What is the typical DC current gain range for this transistor?
The transistor features a DC current gain (hFE) typically between 20 and 70, providing reliable amplification characteristics across its operating range.
