JANTX2N3634UB-Transistor NPN Power Transistor – JEDEC TO-220 Package, High Gain

  • This transistor enables efficient switching and amplification, improving circuit performance and control.
  • Featuring a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • The compact package design reduces board space, facilitating easier integration in tight layouts.
  • Ideal for power regulation in industrial equipment, it helps maintain consistent output and system stability.
  • Manufactured to meet strict quality standards, it offers reliable performance over extended use.
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JANTX2N3634UB-Transistor Overview

The JANTX2N3634UB is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring stringent reliability and durability standards. It features a robust construction with a TO-66 metal can package, ensuring excellent thermal stability and mechanical strength. Offering a collector-emitter voltage rating of 100V and a collector current up to 10A, this transistor supports high-power switching and amplification tasks. Its gain bandwidth product and DC current gain make it suitable for precision analog circuits and power control modules. Engineered and qualified to meet military specifications, the device guarantees consistent operation in harsh environments and critical systems. For detailed sourcing and compliance, visit IC Manufacturer.

JANTX2N3634UB-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling robust power handling for demanding switching and amplification applications.
  • Collector-emitter voltage rating of 100V: Provides reliable operation under high-voltage conditions, essential for power regulation and control circuits.
  • TO-66 metal can package: Offers superior thermal dissipation and enhanced mechanical durability, ensuring long-term reliability in industrial environments.
  • Military-grade qualification: Complies with MIL-STD parameters, guaranteeing performance consistency under extreme temperature and vibration conditions.

JANTX2N3634UB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 75 W
DC Current Gain (hFE) 40 (minimum)
Transition Frequency (fT) 3 MHz (minimum)
Operating Temperature Range -65??C to +200??C
Package Type TO-66 Metal Can

JANTX2N3634UB-Transistor Advantages vs Typical Alternatives

This transistor delivers superior power handling and voltage tolerance compared to standard commercial types, making it ideal for high-reliability and high-stress industrial or military environments. Its robust packaging and extended temperature range enhance operational stability and lifespan, outperforming generic transistors in harsh conditions. The device??s consistent gain and frequency response ensure precise control and amplification, supporting critical system accuracy and reliability.

Typical Applications

  • Power amplification circuits in aerospace and military radios where high current and voltage capability are essential for signal integrity and output power.
  • Switching applications in power supply modules requiring robust thermal management and durability under demanding electrical loads.
  • Industrial control systems operating in extreme temperature environments, benefiting from the transistor??s wide operating range and rugged packaging.
  • High-reliability analog signal processing circuits where consistent gain and noise performance are critical for precision measurement.

JANTX2N3634UB-Transistor Brand Info

The JANTX2N3634UB transistor is a military-grade semiconductor device produced under rigorous quality controls to meet MIL-SPEC standards. This product line is specifically tailored for applications demanding stringent reliability, thermal stability, and durability. Its brand reputation is founded on proven performance in aerospace, defense, and industrial sectors, where failure is not an option. The JANT prefix indicates compliance with Joint Army-Navy testing standards, ensuring the highest quality and traceability.

FAQ

What type of transistor is the JANTX2N3634UB?

The device is an NPN bipolar junction transistor designed for high power and high voltage applications. It is optimized for use in demanding environments such as military and aerospace systems.

What are the maximum voltage and current ratings for this transistor?

This transistor supports a collector-emitter voltage rating of 100V and can handle a collector current up to 10A, making it suitable for high-power switching and amplification tasks.

What package does the JANTX2N3634UB use, and why is it important?

It uses a TO-66 metal can package which provides excellent thermal conductivity and mechanical protection. This packaging enhances device reliability, especially in harsh environments with extreme temperatures and mechanical stress.

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Is this transistor suitable for commercial applications?

While primarily designed for military and aerospace applications due to its stringent specifications and testing, it can be used in commercial applications that require high reliability and durability under challenging conditions.

What operating temperature range does the JANTX2N3634UB support?

The transistor is rated to operate reliably between -65??C and +200??C, enabling it to function effectively in extreme temperature environments commonly encountered in aerospace and military systems.

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