JANTX2N3634-Transistor by JANTX | NPN Power Transistor | TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • It features a robust voltage rating, ensuring stable operation under varying electrical loads.
  • The compact package design supports board-space savings, facilitating integration into dense circuit layouts.
  • Ideal for switching applications, it helps manage power delivery in automotive or industrial equipment.
  • Manufactured to meet rigorous quality standards, it ensures consistent performance and long-term reliability.
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JANTX2N3634-Transistor Overview

The JANTX2N3634-Transistor is a high-performance silicon NPN bipolar junction transistor designed for military and aerospace applications requiring superior reliability and robust operation under harsh conditions. This transistor offers a high voltage rating and excellent current handling capability, making it ideal for power amplification and switching tasks. Its hermetically sealed metal can package ensures enhanced durability and long-term stability. Engineers and sourcing specialists rely on this device for precision switching and amplification functions where stringent quality and performance standards are essential. For detailed sourcing and technical support, visit IC Manufacturer.

JANTX2N3634-Transistor Key Features

  • High Voltage Capacity: Supports collector-emitter voltages up to 300 V, enabling use in high-voltage circuits without compromising safety.
  • Robust Current Handling: Collector current rating of 10 A allows for efficient power switching and amplification in demanding environments.
  • Hermetic Metal Can Package: Provides superior environmental protection and thermal dissipation, ensuring long-term reliability.
  • Military-Grade Quality: Qualified to stringent standards, making it suitable for aerospace and defense applications requiring extreme dependability.

JANTX2N3634-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 300 V
Collector-Base Voltage (Vcbo) 350 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 10 A
Power Dissipation (Pc) 115 W
DC Current Gain (hFE) 40 to 160 ??
Transition Frequency (fT) 15 MHz
Junction Temperature (Tj) 200 ??C

JANTX2N3634-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to typical commercial-grade devices, ensuring increased durability and performance in demanding applications. Its hermetic metal can packaging enhances thermal management and environmental resistance, which is critical for military and aerospace systems. The device??s broad DC current gain range provides flexibility in circuit design, while its qualification to stringent standards guarantees reliability not often found in standard transistors.

Typical Applications

  • Power Amplification: Suitable for RF and audio power amplifier circuits where high voltage and current capacity are required for efficient signal boosting.
  • Switching Circuits: Ideal for high-power switching applications in military-grade control systems and aerospace electronics.
  • Voltage Regulation: Used in voltage regulator modules requiring robust transistor performance for stable operation under stress.
  • Industrial Controls: Applicable in heavy-duty industrial control equipment that demands reliable transistor switching with high thermal tolerance.

JANTX2N3634-Transistor Brand Info

The JANTX2N3634 is part of the JANTX series, a line of military specification transistors known for their rugged construction and dependable performance. Manufactured under strict quality control processes, this transistor meets military standards for environmental and electrical reliability. Its design and packaging ensure operation in extreme temperatures and hostile environments, making it a trusted choice for defense contractors and aerospace engineers. The product is backed by comprehensive datasheets and support, facilitating seamless integration into critical electronic systems.

FAQ

What is the maximum collector-emitter voltage rating of the JANTX2N3634 transistor?

The maximum collector-emitter voltage (Vceo) rating for this transistor is 300 volts. This high voltage capability makes it suitable for use in power amplification and switching circuits that operate at elevated voltage levels.

Can this transistor handle high current loads?

Yes, the transistor supports a maximum collector current of 10 amperes. This allows it to efficiently manage significant power levels in demanding applications such as industrial controls and aerospace systems.

What type of package does the transistor use and why is it important?

The device is housed in a hermetically sealed metal can package. This packaging offers enhanced environmental protection, improved thermal conductivity, and increased reliability in harsh operating conditions common in military and aerospace applications.

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产品中间询盘

What is the typical DC current gain (hFE) range for this transistor?

The DC current gain for this transistor ranges from 40 to 160. This range provides flexibility in designing circuits for various amplification needs, balancing gain with stability and noise considerations.

Is the JANTX2N3634 suitable for commercial consumer electronics?

While technically usable, this transistor is primarily designed and qualified for military and aerospace applications due to its robust specifications and hermetic packaging. Its performance characteristics may exceed the requirements of most consumer electronics, where cost-optimized commercial transistors are commonly used.

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