JANTX2N3507AL-Transistor Power Amplifier NPN Transistor in TO-220 Package by JANT

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a voltage rating suitable for moderate power applications, ensuring stable operation under load.
  • The compact package design allows for easy integration on crowded circuit boards, saving valuable space.
  • Ideal for use in switching regulators, it enhances performance by providing reliable current control.
  • Manufactured to maintain consistent performance, this component supports long-term reliability in devices.
Microchip Technology-logo
产品上方询盘

JANTX2N3507AL-Transistor Overview

The JANTX2N3507AL is a high-performance PNP bipolar junction transistor designed for military and aerospace applications requiring robust operation in harsh environments. Rated for high voltage and power dissipation, it supports reliable amplification and switching functions under extreme conditions. Featuring low leakage current and high gain, this transistor ensures stable and efficient performance in power control circuits. Its hermetically sealed metal can package enhances durability and longevity, making it ideal for critical systems demanding consistent operation. Sourcing from a trusted IC Manufacturer guarantees quality and compliance with stringent military standards.

JANTX2N3507AL-Transistor Key Features

  • High Voltage Rating: Supports collector-emitter voltages up to 60V, enabling use in power amplification and switching circuits.
  • Robust Power Dissipation: Capable of dissipating 1W at 25??C, ensuring reliable operation without thermal failure in demanding applications.
  • Hermetically Sealed TO-39 Package: Provides superior protection against moisture and contaminants, enhancing long-term reliability.
  • Low Leakage Current: Minimizes standby losses and improves overall circuit efficiency, critical in precision analog circuits.

JANTX2N3507AL-Transistor Technical Specifications

Parameter Value Unit Description
Collector-Emitter Voltage (VCEO) 60 V Maximum voltage between collector and emitter
Collector-Base Voltage (VCBO) 60 V Maximum voltage between collector and base
Emitter-Base Voltage (VEBO) 5 V Maximum voltage between emitter and base
Collector Current (IC) 1 A Maximum continuous collector current
Power Dissipation (PD) 1 W Maximum power dissipation at 25??C
DC Current Gain (hFE) 40?C100 Unitless Gain range at IC=150mA
Transition Frequency (fT) 40 MHz Frequency at which current gain drops to unity
Operating Temperature Range -65 to +200 ??C Temperature range for safe operation

JANTX2N3507AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and high voltage tolerance compared to standard commercial devices, making it well-suited for mission-critical applications. Its hermetic packaging and low leakage current enhance long-term stability, while the wide operating temperature range ensures consistent performance in extreme environments. These characteristics provide a distinct advantage in aerospace and military electronics where precision and durability are paramount.

Typical Applications

  • Power amplification in military-grade communication and radar systems, benefiting from the transistor??s high gain and voltage capacity.
  • Switching elements in aerospace control circuits requiring stable operation across wide temperature ranges.
  • Signal processing in defense instrumentation where low leakage and high reliability are essential.
  • General-purpose amplification in harsh environmental conditions, including industrial control systems.

JANTX2N3507AL-Transistor Brand Info

The JANTX2N3507AL is manufactured under stringent military standards, ensuring ruggedness and reliability required in defense and aerospace sectors. This transistor is part of a legacy of high-quality bipolar junction transistors produced by well-established semiconductor manufacturers specializing in hermetically sealed, high-reliability components. The brand emphasizes durability, precision, and compliance with MIL-STD specifications, making it a preferred choice for engineers designing robust electronic systems.

FAQ

What type of transistor is the JANTX2N3507AL?

The JANTX2N3507AL is a PNP bipolar junction transistor (BJT), designed primarily for amplification and switching purposes in high-reliability and high-voltage applications.

What is the maximum collector current rating of this transistor?

This transistor supports a maximum continuous collector current of 1 ampere, accommodating moderate power levels typical in aerospace and military circuits.

How does the hermetic TO-39 package benefit the transistor??s performance?

The hermetic TO-39 metal can package protects the transistor from moisture, dust, and other environmental contaminants, ensuring long-term reliability and stable electrical characteristics in harsh operational environments.

📩 Contact Us

产品中间询盘

What temperature range can this transistor reliably operate within?

The device operates safely across a wide temperature range from -65??C up to +200??C, making it suitable for extreme environmental conditions encountered in aerospace and defense applications.

What is the significance of the low leakage current specification?

Low leakage current reduces power losses when the transistor is in the off state, contributing to higher efficiency and improved signal integrity in sensitive analog and switching circuits.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?