The JANTX2N3506U4 is a high-reliability NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. This transistor is constructed with a silicon epitaxial planar process, offering robust operation in high-voltage switching and amplification circuits. It features a collector-emitter voltage rating of 60 V and a collector current of 10 A, making it suitable for medium-power applications. Its hermetically sealed metal can package ensures enhanced environmental protection and long-term stability. Engineers and sourcing specialists can rely on its consistent performance under demanding conditions, making it a preferred choice in defense-grade electronic systems. For more details, visit IC Manufacturer.
JANTX2N3506U4-Transistor Technical Specifications
Parameter
Specification
Unit
Transistor Type
NPN Bipolar Junction
–
Collector-Emitter Voltage (V_CEO)
60
V
Collector-Base Voltage (V_CBO)
80
V
Emitter-Base Voltage (V_EBO)
5
V
Collector Current (I_C)
10
A
Power Dissipation (P_D)
75
W
Gain Bandwidth Product (f_T)
10
MHz
DC Current Gain (h_FE)
20 ?C 70
Dimensionless
Package Type
Hermetic Metal Can (TO-39)
–
JANTX2N3506U4-Transistor Key Features
High Collector Current Capacity: Supports continuous collector current up to 10 A, enabling effective handling of medium-power switching and amplification tasks with minimal thermal stress.
Robust Voltage Ratings: With a collector-emitter voltage of 60 V and a collector-base voltage of 80 V, it ensures reliable operation in circuits requiring high-voltage tolerance.
Hermetically Sealed TO-39 Package: Provides excellent environmental protection, enhancing device longevity and reliability in harsh operating conditions.
Wide DC Current Gain Range: Gain between 20 and 70 allows flexibility in circuit design for optimized amplification and switching performance.
Typical Applications
Military and aerospace electronic systems requiring high-reliability transistors with strict quality control and environmental protection.
High-voltage switching circuits where stable operation and voltage tolerance are critical.
Medium-power amplification stages in communication and radar equipment.
Power management and control circuits in defense-grade hardware that demand long-term operational stability.
JANTX2N3506U4-Transistor Advantages vs Typical Alternatives
This transistor delivers superior reliability and environmental resilience compared to standard commercial transistors, thanks to its hermetic metal can packaging and military-grade screening. Its high current and voltage ratings offer more robust performance in demanding industrial and defense applications. The broad gain range and stable operation under thermal stress give design engineers greater flexibility and confidence when selecting components for mission-critical electronics.
The JANTX2N3506U4 transistor is a JEDEC-registered device manufactured under stringent military standards, often distributed by leading semiconductor suppliers specializing in defense and aerospace-grade components. It is part of the JANTX series, known for compliance with MIL-STD-883 and MIL-PRF-19500 standards, ensuring traceability, reliability, and rigorous quality assurance. The brand reputation is built on decades of proven performance in harsh environments, making it a trusted choice for engineers designing reliable, long-lasting electronic systems.
