JANTX2N3506AL-Transistor by ON Semiconductor, NPN Power Transistor, TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • Featuring a high voltage rating, it supports robust operation under demanding electrical conditions.
  • The compact package type ensures board-space savings, facilitating dense circuit designs.
  • Ideal for power regulation tasks, it improves stability and performance in power supply applications.
  • Manufactured to meet strict quality standards, it offers dependable performance over extended use.
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JANTX2N3506AL-Transistor Overview

The JANTX2N3506AL-Transistor is a high-performance silicon NPN bipolar junction transistor designed for military and aerospace applications requiring stringent reliability and stability. It supports high voltage and power handling capabilities, making it suitable for rugged industrial environments. This transistor offers robust electrical characteristics such as a collector-emitter voltage rating of 100V and a collector current capacity of 10A, ensuring dependable switching and amplification in demanding circuits. Engineered to meet JAN (Joint Army-Navy) standards, it combines precision manufacturing with enhanced durability, providing engineers and sourcing specialists a reliable component choice for critical electronic systems. For more information, visit IC Manufacturer.

JANTX2N3506AL-Transistor Key Features

  • High Voltage Rating: Rated for a collector-emitter voltage of 100V, allowing safe operation in high-voltage switching applications.
  • High Collector Current Capacity: Supports collector currents up to 10A, enabling efficient power amplification and load driving.
  • Military-Grade Reliability: Manufactured to JAN specifications, ensuring performance under harsh environmental conditions and extended lifecycle.
  • Thermal Stability: Robust thermal characteristics with maximum junction temperature of 200??C, enhancing operational reliability in elevated temperature environments.

JANTX2N3506AL-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 140 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 10 A
Power Dissipation (Pc) 115 W
DC Current Gain (hFE) 20 to 70
Transition Frequency (fT) 5 MHz
Junction Temperature (Tj) 200 ??C
Package TO-3 Metal Can

JANTX2N3506AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage ratings compared to standard commercial-grade devices, making it ideal for high-reliability military and aerospace systems. Its compliance with JAN standards guarantees enhanced ruggedness and thermal endurance, providing engineers with a dependable solution for demanding industrial applications. The combination of robust current capacity and stable gain characteristics ensures consistent performance where precision and longevity are critical.

Typical Applications

  • Power amplification in military communication equipment requiring stable high-current operation under extreme conditions.
  • Switching circuits in aerospace instrumentation where reliability and thermal stability are critical.
  • Industrial motor control systems that benefit from high voltage and current capabilities.
  • High-reliability test and measurement devices operating in harsh environments.

JANTX2N3506AL-Transistor Brand Info

The JANTX2N3506AL-Transistor adheres to the JAN (Joint Army-Navy) military specification, a mark of stringent quality and reliability in semiconductor manufacturing. This designation ensures the transistor meets rigorous standards for performance, durability, and consistency in high-reliability electronic applications. The product is designed and produced by trusted manufacturers specializing in military-grade components, offering engineers confidence in sourcing parts that comply with established defense and aerospace requirements.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter voltage (Vceo) rating for this transistor is 100 volts. This allows it to safely operate in circuits with relatively high voltage levels without breakdown.

Can this transistor handle high current loads?

Yes, it supports a maximum collector current (Ic) of 10 amperes, making it suitable for applications requiring significant current handling such as power amplifiers and motor drivers.

What package type is used for this transistor?

This device is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical robustness for high-power applications.

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产品中间询盘

Is this transistor suitable for high-temperature environments?

Absolutely. The maximum junction temperature rating is 200 degrees Celsius, ensuring reliable operation even under elevated thermal stress common in industrial and military settings.

What standards does this transistor comply with?

It complies with the JAN (Joint Army-Navy) military standards, which guarantee high reliability, quality, and performance under demanding conditions typical of aerospace and defense applications.

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