JANTX2N3501UB-Transistor Overview
The JANTX2N3501UB is a high voltage, high power NPN bipolar junction transistor (BJT) designed for use in demanding industrial and military-grade electronic applications. Featuring robust construction and reliable performance, this transistor supports collector-emitter voltages up to 100V and collector currents up to 10A, making it ideal for power switching and amplification tasks. Its high gain and durable packaging ensure stable operation under harsh environmental conditions. Engineers and sourcing specialists benefit from its consistent electrical characteristics and long-term reliability, making it a preferred choice in critical systems. For more detailed selection and support, visit IC Manufacturer.
JANTX2N3501UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 10 A (continuous) |
| Power Dissipation (PD) | 115 W |
| DC Current Gain (hFE) | 20 to 70 (depending on collector current) |
| Transition Frequency (fT) | 2.5 MHz |
| Operating Junction Temperature | -65??C to +200??C |
| Package Type | Metal Can (TO-3) |
JANTX2N3501UB-Transistor Key Features
- High voltage capability: Supports up to 100 V collector-emitter voltage, enabling operation in high power circuits with significant voltage swings.
- Robust current handling: Continuous collector current rating of 10 A allows for heavy load driving without performance degradation.
- Wide operating temperature range: Junction temperatures from -65??C to +200??C enable deployment in harsh industrial and military environments.
- Reliable metal can packaging: TO-3 encapsulation ensures excellent thermal conductivity and mechanical stability for long-term reliability.
- Moderate gain and frequency response: Current gain between 20 and 70 with a transition frequency of 2.5 MHz balances amplification and switching speed for diverse applications.
Typical Applications
- Power amplification stages in industrial equipment where high voltage and current control are essential for efficient operation and durability.
- Switching regulators and power supplies requiring robust transistors capable of handling high collector current under high voltage conditions.
- Motor control circuits in automation and machinery that demand reliable transistor switching and amplification at elevated temperatures.
- Military and aerospace electronics where components must maintain performance under extreme environmental stresses and temperature variations.
JANTX2N3501UB-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage tolerance compared to standard BJTs, making it ideal for high voltage and high current applications. Its metal TO-3 package provides enhanced thermal dissipation and mechanical protection, ensuring greater reliability in industrial and military environments. Compared to typical alternatives, it delivers consistent gain and robust operation across wide temperature ranges, enhancing system stability and lifetime.
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JANTX2N3501UB-Transistor Brand Info
The JANTX2N3501UB is a military-grade transistor manufactured to stringent quality and reliability standards. The “JAN” prefix denotes compliance with Joint Army-Navy specifications, ensuring its suitability for defense and aerospace applications. This transistor is typically produced by established semiconductor manufacturers specializing in high-reliability components. Its design reflects decades of industry expertise in power transistor technology, providing users with a trusted solution for critical electronic systems.
FAQ
| Application | Aerospace and Defense, Energy and Power, Industrial Automation |
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