JANTX2N3501-Transistor NPN Power Transistor in TO-3 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling effective control in various circuit designs.
  • Its maximum voltage rating ensures stable operation under demanding electrical conditions.
  • The compact package supports efficient board layout by minimizing space usage.
  • Ideal for switching applications, it enhances performance in power management circuits.
  • Manufactured to meet industry standards, it offers dependable and consistent functionality.
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JANTX2N3501-Transistor Overview

The JANTX2N3501 is a high-voltage, NPN bipolar junction transistor (BJT) designed for military and industrial applications requiring robust performance and reliability. It operates with a collector-emitter voltage rating of 100V and a collector current capability of up to 4A, making it suitable for medium-power switching and amplification tasks. Its hermetically sealed package ensures durability under harsh environmental conditions, meeting stringent military standards. This transistor is widely used in power regulation, signal amplification, and switching circuits where dependable operation is critical. For procurement and detailed specifications, consult IC Manufacturer.

JANTX2N3501-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 4 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40 to 160 ??
Transition Frequency (fT) ?? MHz
Operating Junction Temperature -65 to +200 ??C

JANTX2N3501-Transistor Key Features

  • High Voltage Capability: Rated for 100V collector-emitter voltage, enabling use in medium-power switching and amplification circuits requiring voltage tolerance.
  • Robust Current Handling: Supports up to 4A collector current, allowing reliable operation in demanding power control applications.
  • Wide Operating Temperature Range: With junction temperatures from -65??C to +200??C, it withstands extreme thermal environments common in aerospace and defense sectors.
  • Hermetically Sealed Metal Can Package: Provides enhanced protection against moisture, contaminants, and mechanical stress, ensuring long-term reliability.

Typical Applications

  • Military and aerospace power regulation circuits requiring rugged, high-voltage transistors to maintain stable performance under extreme conditions.
  • Industrial motor control and switching applications where high current and voltage ratings are essential.
  • Signal amplification stages in robust communication and radar equipment.
  • High-reliability electronic systems used in harsh environments, benefiting from hermetic sealing and wide temperature tolerance.

JANTX2N3501-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings combined with a hermetically sealed package, outperforming many commercial alternatives in harsh environments. Its broad operating temperature range and robust construction enhance reliability and lifecycle in military and aerospace applications. These features translate to improved accuracy and stable operation in demanding industrial settings, making it a trusted choice compared to typical BJTs lacking such ruggedness and certification.

JANTX2N3501-Transistor Brand Info

The JANTX2N3501 is a JEDEC-standardized semiconductor device, originally specified under military standards for high-reliability applications. It is manufactured by multiple trusted suppliers specializing in military-grade components. This transistor meets MIL-STD-883 testing requirements, ensuring compliance with strict quality and performance criteria. Its provenance under the JEDEC JANTX prefix signifies qualification for aerospace and defense electronics, making it a preferred solution for engineers sourcing dependable, time-tested transistors.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage is 100 volts, which allows the device to handle medium-power switching and amplification tasks safely without

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