JANTX2N3440UA-Transistor Overview
The JANTX2N3440UA is a high-power NPN bipolar junction transistor designed for demanding industrial and military applications. Known for its robust performance and reliability, this transistor operates with a collector-emitter voltage rating of up to 100V and a continuous collector current of 10A, ensuring strong switching and amplification capabilities. It features a TO-3 metal can package that offers excellent thermal dissipation, making it suitable for high-power applications. Engineered to meet stringent military standards, it provides enhanced durability under harsh environmental conditions. The device is ideal for power regulation, amplification, and switching in industrial electronic circuits. For detailed sourcing and additional product information, visit IC Manufacturer.
JANTX2N3440UA-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector-Base Voltage (Vcbo) | 120 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current – Continuous (Ic) | 10 A |
| Collector Dissipation (Pc) | 115 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 3 MHz |
| Package Type | TO-3 Metal Can |
JANTX2N3440UA-Transistor Key Features
- High Collector Current Capacity: Supports up to 10A continuous current, enabling efficient handling of high-power loads for industrial power amplification.
- Wide Voltage Ratings: With a collector-emitter voltage rating of 100V and collector-base voltage up to 120V, it provides robust voltage tolerance in various circuit designs.
- TO-3 Metal Can Package: Ensures superior heat dissipation and mechanical durability, enhancing operational reliability in demanding environments.
- Military-Grade Quality: Built to stringent military standards, offering enhanced longevity and performance stability under extreme temperature and electrical stress conditions.
Typical Applications
- Power Amplification: Utilized in industrial and military power amplifier circuits requiring high current and voltage handling with reliable thermal management.
- Switching Circuits: Suitable for switching high current loads in power supplies, motor controllers, and relay drivers.
- Voltage Regulation: Employed in linear voltage regulators and power management circuits for stable output under varying loads.
- Industrial Control Systems: Implemented in heavy machinery control and automation where durable and high-performance transistors are essential.
JANTX2N3440UA-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage tolerance compared to many standard NPN transistors. Its TO-3 package provides enhanced thermal management capabilities, improving reliability and longevity in high-power applications. Its military-grade construction ensures consistent performance in harsh environments, making it a preferred choice over typical commercial-grade alternatives for critical industrial and defense systems.
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JANTX2N3440UA-Transistor Brand Info
The JANTX2N3440UA is a military-grade transistor originally manufactured under the JAN (Joint Army-Navy) standard, ensuring rigorous testing and quality assurance. This device is typically produced by established semiconductor manufacturers specializing in high-reliability components for defense and industrial sectors. The JAN prefix signifies compliance with stringent military specifications, including enhanced temperature range, vibration resistance, and extended lifecycle. This makes the transistor well-suited for applications requiring dependable and rugged semiconductor solutions.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current for this transistor is rated at 10 amperes, allowing it to handle substantial load currents in power amplification and switching applications.
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What package type does this transistor use, and why is it important?
This transistor utilizes a TO-3 metal can package, which is critical for effective heat dissipation and mechanical robustness. This packaging supports reliable operation under high power and thermal stress conditions.
Can this transistor be used in high-frequency applications?
The transition frequency (fT) of this transistor is approximately 3 MHz, making






