JANTX2N3421P-Transistor-PIND NPN Power Transistor by JANTX2N3421P in PIND Package

  • This transistor enables efficient signal amplification, improving circuit performance in various electronic designs.
  • Its voltage and current ratings support stable operation under typical load conditions, ensuring consistent output.
  • The PIND package offers a compact footprint, aiding in board-space optimization for dense circuit layouts.
  • Ideal for use in switching applications, it allows precise control of power delivery in electronic devices.
  • Manufactured under strict quality controls, this component maintains reliability throughout its operational lifespan.
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JANTX2N3421P-Transistor-PIND Overview

The JANTX2N3421P-Transistor-PIND is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial and military-grade electronics. Featuring a silicon NPN construction, this transistor delivers reliable operation under stringent conditions, making it ideal for precision analog circuits and power management designs. With a high voltage and current rating, it supports demanding environments requiring consistent gain and stability. Sourced from IC Manufacturer, this transistor ensures compliance with rigorous quality standards, providing engineers and sourcing specialists a dependable solution for high-reliability projects.

JANTX2N3421P-Transistor-PIND Key Features

  • High voltage handling capability: Supports collector-emitter voltages up to 100 V, enabling use in diverse power control scenarios.
  • Robust current capacity: Handles collector currents up to 10 A, ensuring effective load driving and switching performance.
  • Military-grade reliability: Constructed to meet JAN (Joint Army-Navy) standards, guaranteeing long-term durability and performance under harsh conditions.
  • Low saturation voltage: Enhances efficiency by minimizing power loss during transistor switching cycles.

JANTX2N3421P-Transistor-PIND Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (PD) 75 W
Gain Bandwidth Product (fT) 4 MHz
Package Type PIND (Plastic Industrial Dual-in-line)
Operating Temperature Range -65??C to +200??C

JANTX2N3421P-Transistor-PIND Advantages vs Typical Alternatives

This transistor excels compared to typical alternatives due to its higher voltage and current ratings combined with military-grade certification, ensuring superior reliability and robustness in critical applications. Its low saturation voltage reduces power loss, improving overall circuit efficiency. The wide operating temperature range allows it to maintain stable performance in extreme environments, making it a preferred choice for demanding industrial and defense electronics.

Typical Applications

  • Power amplification and switching in high-voltage industrial control circuits, where reliable transistor operation under load is critical for system stability.
  • Military and aerospace electronic systems requiring components qualified to rigorous JAN standards for enhanced durability.
  • Signal amplification stages in analog circuits needing consistent gain and low distortion performance.
  • High-power driver circuits for motors, relays, and solenoids, leveraging the transistor??s high current handling capabilities.

JANTX2N3421P-Transistor-PIND Brand Info

The JANTX2N3421P-Transistor-PIND is a military-rated transistor produced under strict quality controls to meet Joint Army-Navy (JAN) standards. This designation reflects its suitability for defense and aerospace applications where reliability cannot be compromised. The PIND package provides a robust physical form factor ensuring mechanical stability and ease of integration onto printed circuit boards. This product line has a long-standing reputation for consistent performance and durability in harsh environments, supporting engineers in sourcing dependable active semiconductor devices for critical system designs.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for the device is 10 amperes, allowing it to handle significant loads in switching and amplification applications without risk of damage or performance degradation.

Can this transistor operate at elevated temperatures?

Yes, it supports an operating temperature range from -65??C up to +200??C, making it suitable for applications exposed to extreme thermal conditions, such as military and industrial environments.

What package type does this transistor use and why is it important?

This transistor is housed in a PIND (Plastic Industrial Dual-in-line) package, which offers mechanical stability and ease of mounting on circuit boards. This package type also contributes to effective heat dissipation during high-power operation.

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Is this transistor compliant with any military or aerospace standards?

Yes, the transistor is JAN-qualified, meaning it meets strict Joint Army-Navy standards for reliability, electrical performance, and durability under harsh conditions typical of military and aerospace applications.

What are the voltage ratings for safe operation of this transistor?

It supports a collector-emitter voltage and collector-base voltage of up to 100 volts, and an emitter-base voltage of 5 volts, allowing it to function reliably in high-voltage circuits without breakdown.

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