JANTX2N3019S-Transistor Overview
The JANTX2N3019S transistor is a high-reliability, silicon NPN bipolar junction transistor designed for rugged military and industrial applications. It features robust electrical characteristics including a collector-emitter voltage rating suitable for medium-power switching and amplification tasks. Manufactured to stringent JAN (Joint Army-Navy) standards, this device offers enhanced durability and consistent performance under harsh environmental conditions. Ideal for demanding electronic circuits, it supports effective current handling with reliable gain parameters, making it a preferred choice for engineers requiring dependable semiconductor solutions. For detailed sourcing and technical assistance, visit IC Manufacturer.
JANTX2N3019S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 3 A |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 25 MHz |
| Package Type | TO-39 Metal Can |
JANTX2N3019S-Transistor Key Features
- High Voltage Handling: Supports up to 60 V collector-emitter voltage, enabling use in medium-power switching circuits with reliable voltage tolerance.
- Robust Current Capacity: Handles collector currents up to 3 A, allowing effective control of moderate load currents in industrial applications.
- Wide Gain Range: Provides DC current gain from 40 to 160, ensuring flexibility across amplification tasks and signal conditioning needs.
- Military-Grade Reliability: Built according to stringent JAN standards, this transistor maintains consistent performance under extreme temperature and mechanical stress.
- Thermally Efficient Package: TO-39 metal can design offers superior heat dissipation for enhanced operational stability and longevity.
Typical Applications
- Industrial control circuits requiring robust and reliable transistor switching components for moderate power loads and signal amplification.
- Military and aerospace electronics where compliance with military standards and high reliability are mandatory.
- Power amplification stages in analog signal processing, benefiting from high current gain and voltage ratings.
- General-purpose medium-power switching in automation systems and instrumentation equipment.
JANTX2N3019S-Transistor Advantages vs Typical Alternatives
This transistor stands out by combining military-grade reliability with a solid balance of voltage rating and current capacity. Compared to typical commercial alternatives, it offers enhanced durability under harsh environments and wider operational tolerances. Its TO-39 metal package ensures better thermal management, improving long-term stability and reducing failure rates. These qualities make it ideal for applications demanding precision, ruggedness, and consistent electrical performance.
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JANTX2N3019S-Transistor Brand Info
The JANTX2N3019S is part of the JAN (Joint Army-Navy) semiconductor series, originally specified for military use and now widely trusted in industrial applications. These transistors are produced under rigorous quality controls to meet strict military standards for reliability, temperature range, and mechanical robustness. Typically manufactured by established semiconductor companies specializing in defense-grade components, the JAN series ensures that users receive products with verified performance and traceability. This transistor??s provenance reflects decades of industry trust in devices designed for demanding operational conditions.
FAQ
What type of transistor is the JANTX2N3019S?
The device is an NPN bipolar junction transistor (BJT), designed for
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