JANTX2N2906AUA-Transistor PNP Amplifier Transistor in TO-18 Metal Can Package by JAN

  • This transistor switches and amplifies electrical signals, enabling efficient control in electronic circuits.
  • Designed with a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • Its compact package reduces board space, allowing for denser and more streamlined circuit designs.
  • Ideal for use in power regulation circuits where reliable signal amplification improves overall system performance.
  • Manufactured to meet strict quality standards, ensuring consistent performance and long-term reliability.
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产品上方询盘

JANTX2N2906AUA-Transistor Overview

The JANTX2N2906AUA is a high-reliability PNP bipolar junction transistor designed for demanding industrial and military applications. It delivers robust performance with a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, enabling efficient signal amplification and switching. This transistor features a complementary silicon structure optimized for linear and switching operations, ensuring stable operation under varying temperature and load conditions. Its hermetically sealed TO-18 metal can package enhances durability and longevity in harsh environments. Sourced through IC Manufacturer, it meets stringent quality standards essential for critical electronic systems.

JANTX2N2906AUA-Transistor Key Features

  • High Collector Current Capacity: Supports up to 600mA, enabling effective power handling for switching and amplification tasks.
  • Collector-Emitter Voltage Rating of 40V: Provides reliable operation in circuits with moderate voltage requirements, reducing risk of breakdown.
  • Complementary Silicon PNP Structure: Ensures consistent gain and switching speed, suitable for analog and digital circuit integration.
  • Hermetically Sealed TO-18 Metal Can Package: Enhances environmental protection and mechanical stability for extended device life.

JANTX2N2906AUA-Transistor Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction
Maximum Collector-Emitter Voltage (Vceo) 40 V
Maximum Collector Current (Ic) 600 mA
Power Dissipation (Pd) 800 mW
DC Current Gain (hFE) 100 to 300
Transition Frequency (fT) 100 MHz (typical)
Junction Temperature Range (Tj) -65??C to +200??C
Package Type TO-18 Metal Can

JANTX2N2906AUA-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability through its hermetically sealed metal package, which outperforms plastic-encapsulated alternatives in harsh or high-temperature environments. Its balanced collector current and voltage ratings provide an ideal trade-off between power handling and efficiency, making it a dependable choice for both linear amplification and switching. The device??s stable gain and frequency response enable precision control, offering engineers enhanced circuit accuracy and durability.

Typical Applications

  • Signal amplification in audio and industrial control circuits where stable gain and linearity are critical for performance reliability.
  • Switching elements in power management and relay driver circuits requiring robust current handling capability.
  • Complementary transistor pairs in push-pull amplifier stages for efficient and distortion-free output.
  • Military and aerospace electronics designed for extended temperature range and environmental resilience.

JANTX2N2906AUA-Transistor Brand Info

The JANTX2N2906AUA transistor is a product line supported by a trusted manufacturer specializing in military-grade semiconductor components. This device follows JANTX standards, indicating rigorous screening and qualification to meet defense and industrial specifications. Its production complies with strict quality assurance processes, ensuring performance consistency and reliability for mission-critical applications. The brand??s legacy in semiconductor manufacturing enhances confidence in long-term supply and technical support.

FAQ

What is the maximum current the transistor can safely handle?

The device can safely handle a maximum collector current of 600mA, making it suitable for medium power applications where stable switching or amplification is needed without overheating or damage.

What type of package does this transistor use and why is it important?

This transistor is housed in a TO-18 metal can package, which provides excellent hermetic sealing. This packaging protects the semiconductor die from moisture, contaminants, and mechanical stress, enhancing durability in harsh environments.

Can this transistor operate in high-temperature conditions?

Yes, it supports a junction temperature range from -65??C to +200??C, allowing reliable operation in extreme temperature environments typical in aerospace and military applications.

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产品中间询盘

What are the typical applications for this transistor model?

It is commonly used for signal amplification, switching, relay driving, and complementary amplifier stages in industrial, military, and aerospace electronics requiring high reliability and precise performance.

How does its gain (hFE) affect circuit design?

The transistor offers a DC current gain ranging from 100 to 300, providing designers with sufficient amplification capability. This range allows for flexibility in circuit configurations, balancing input current requirements with output signal strength.

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