JANTX2N2812-Transistor NPN Power Amplifier Transistor in TO-66 Metal Can Package

JANTX2N2812-Transistor Overview

The JANTX2N2812 is a high-performance NPN bipolar junction transistor designed for use in high voltage and power applications. Featuring a collector-emitter voltage rating of 100 V and a collector current capacity of up to 3 A, this transistor delivers reliable switching and amplification in demanding electronic circuits. With a gain bandwidth product (fT) of 8 MHz and a complementary low saturation voltage, it offers efficient operation for industrial and military-grade systems. The device is hermetically sealed in a TO-39 metal can package, ensuring durability and enhanced thermal management. For detailed sourcing and technical support, consult IC Manufacturer.

JANTX2N2812-Transistor Technical Specifications

JANTX2N2812-Transistor Key Features

• High voltage rating: Supports up to 100 V collector-emitter voltage, enabling it to handle demanding power applications safely.
• Robust current capacity: Allows continuous collector current up to 3 A, providing reliable performance in power switching and amplification.
• Wide operating temperature range: Rated for junction temperatures up to +200??C, ensuring durability in harsh industrial environments.
• Hermetically sealed TO-39 package: Offers excellent thermal conductivity and protection against moisture and contamination for improved reliability.

Typical Applications

• Power amplification circuits in industrial control systems where high voltage and current handling are critical for operational stability.
• Switching applications in military and aerospace electronics requiring rugged and reliable transistor components.
• High voltage driver stages in telecommunications equipment to ensure signal integrity and power efficiency.
• General-purpose discrete transistor use in analog circuits demanding robust performance under elevated temperature conditions.

JANTX2N2812-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage tolerance and robust current handling compared to typical low-power transistors, making it ideal for industrial and military-grade applications. Its hermetically sealed metal package enhances reliability and thermal dissipation, reducing failure rates in harsh environments. The wide gain range supports flexible circuit design, providing accuracy and stability without compromising power efficiency.

JANTX2N2812-Transistor Brand Info

The JANTX2N2812 is part of the JAN (Joint Army-Navy) series of transistors, originally developed for military applications requiring high reliability and stringent quality standards. Manufactured under stringent military specifications (MIL-STD), this transistor is produced by several certified semiconductor manufacturers specializing in defense-grade components. It is recognized for its rugged packaging, superior electrical performance, and long-term availability for critical aerospace and defense projects. The JAN designation confirms its compliance with MIL-PRF-19500 standards, ensuring consistent quality and traceability.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current (I_C) rating for this transistor is 3 amperes, allowing it to handle substantial load currents in power amplification and switching applications.

Can this transistor operate at high temperatures?

Yes, the transistor is rated for junction temperatures up to +