JANTX2N2604-Transistor Overview
The JANTX2N2604 is a high-performance silicon NPN bipolar junction transistor designed primarily for switching and linear amplification in demanding industrial and military applications. Built to military standards, this transistor offers robust electrical characteristics including high voltage and current ratings, making it suitable for power control and signal amplification tasks. Its rugged construction ensures reliable operation in harsh environments, while the device maintains consistent gain and low leakage currents. Engineers and sourcing specialists will find this transistor ideal for applications requiring durability and precise electrical performance. For trusted semiconductor solutions, explore options at IC Manufacturer.
JANTX2N2604-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Silicon Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 5 A |
| Power Dissipation (PD) | 40 W |
| DC Current Gain (hFE) | 40 to 160 (at IC = 1 A) |
| Transition Frequency (fT) | ?? 3 MHz |
| Package Type | TO-3 Metal Can |
JANTX2N2604-Transistor Key Features
- High voltage and current handling: Supports up to 100 V and 5 A, enabling use in power amplifier and switching circuits with demanding electrical loads.
- Military-grade construction: Designed to meet stringent reliability standards, ensuring stable performance under extreme temperature and environmental conditions.
- Wide gain range: Provides a DC current gain from 40 to 160, allowing flexible usage in amplification stages with consistent linearity.
- Low leakage currents: Minimizes losses and enhances efficiency in both switching and analog applications.
- Robust TO-3 package: Facilitates efficient heat dissipation and mechanical durability in industrial environments.
Typical Applications
- Power amplifier circuits in industrial and military communication systems, where high voltage and current capability are critical for signal integrity.
- Switching regulators and power control modules requiring reliable transistor operation under high load conditions.
- Linear amplification in audio and RF circuits, benefiting from consistent gain and low noise characteristics.
- Military and aerospace electronic systems demanding components with proven ruggedness and long-term stability.
JANTX2N2604-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to many standard equivalents, providing engineers with enhanced reliability and performance in power and switching applications. Its military-grade qualification ensures consistent operation in harsh environments where typical commercial transistors may fail. The wide gain range and low leakage currents optimize both efficiency and precision, making it a preferred choice for demanding industrial and defense electronics systems.
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JANTX2N2604-Transistor Brand Info
The JANTX2N2604 is part of the JAN (Joint Army-Navy) series of transistors, reflecting compliance with rigorous military standards for quality and reliability. Originally developed by manufacturers specializing in defense-grade semiconductors, these devices are produced under strict quality control processes to ensure durability in critical applications. The TO-3 metal can package is characteristic of the era??s high-power transistors, designed for effective thermal management and mechanical robustness. This transistor remains favored in legacy and current military and aerospace projects requiring dependable silicon bipolar junction technology.
FAQ
What does the “JAN” designation in JANTX2N2604 signify?
“JAN” stands for Joint Army-Navy, indicating that the transistor meets stringent military specifications for reliability, performance, and quality. Devices with this prefix are designed for use in defense and aerospace applications, ensuring robust operation under extreme conditions.
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What are the maximum voltage ratings for this transistor?
The transistor supports a maximum collector-emitter voltage of 100 V







