JANTX2N2484UA-Transistor by JAN – High Power NPN Transistor, TO-3 Package

JANTX2N2484UA-Transistor Overview

The JANTX2N2484UA is a high-performance NPN bipolar junction transistor engineered for military and aerospace applications requiring stringent reliability standards. Designed with a robust silicon epitaxial planar structure, this transistor offers exceptional gain characteristics and high breakdown voltage, ensuring consistent operation under demanding conditions. Its ruggedized hermetic metal can package provides enhanced thermal stability and environmental protection, making it ideal for precision amplification and switching in harsh environments. Sourcing this component from a trusted IC Manufacturer guarantees compliance with MIL-STD-883 for quality and reliability.

JANTX2N2484UA-Transistor Key Features

• High voltage rating: Supports collector-emitter voltages up to 100V, enabling use in high-voltage switching and amplification circuits.
• Superior gain bandwidth product: Provides efficient signal amplification over a wide frequency range, critical for RF and analog applications.
• Hermetically sealed metal can package: Ensures robust protection against moisture and contaminants, enhancing long-term reliability in extreme environments.
• Military-grade quality: Tested per MIL-STD-883 standards, guaranteeing consistent performance and durability in aerospace and defense systems.

JANTX2N2484UA-Transistor Technical Specifications

JANTX2N2484UA-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical commercial-grade transistors by offering superior voltage handling and enhanced thermal stability, essential for mission-critical military and aerospace applications. Its hermetic metal can packaging improves environmental resistance compared to plastic-encapsulated devices, while compliance with rigorous MIL-STD-883 testing ensures reliability under extreme mechanical and thermal stress. These advantages make it a preferred choice where durability and consistent electrical performance are paramount.

Typical Applications

• High-reliability military and aerospace amplifier circuits requiring stable gain and high voltage tolerance in harsh environments.
• Switching applications in defense electronics where ruggedness and long-term durability are critical.
• Precision analog signal processing circuits demanding low noise and high frequency response.
• Power regulation and control modules in avionics systems operating under wide temperature ranges.

JANTX2N2484UA-Transistor Brand Info

The JANTX2N2484UA is produced under the JANTX series, a trusted line of transistors meeting military standards for quality and performance. This series is known for its rigorous screening and qualification processes, including hermetic sealing and extensive electrical testing, to ensure consistent operation in demanding applications. The product is sourced from a manufacturer specializing in high-reliability semiconductors, catering specifically to aerospace, defense, and industrial markets where component failure is not an option.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (V_CEO) for this device is rated at 100 volts, allowing it to operate safely in circuits with relatively high voltage requirements.

What type of packaging does the transistor use, and why is it important?

This transistor utilizes a hermetically sealed metal can package, which provides excellent protection against moisture, dust, and mechanical stress, thereby enhancing reliability in harsh or demanding environments.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (f_T) of approximately 50 MHz, it is suitable for moderate high-frequency amplification and switching tasks commonly found in aerospace and military systems.

What are the operating temperature limits for this transistor?

The device is rated for operation over a wide temperature range from -65??C to +200??C, making it suitable for extreme environmental conditions encountered in military and aerospace applications.

How does the current gain of this transistor affect its performance?

The DC current gain (h_FE) ranges from 40 to 160, providing good amplification capabilities. This range allows engineers to design circuits with predictable gain performance and efficient signal control.