JANTX2N2369AUA/TR NPN Power Transistor by JAN – High Voltage TO-3 Package

  • This transistor provides efficient amplification and switching, enabling improved circuit performance in various designs.
  • Featuring a robust voltage rating, it ensures stable operation under demanding electrical conditions.
  • The compact package type offers board-space savings, facilitating integration into size-constrained applications.
  • Ideal for power regulation tasks, it supports consistent current control in industrial and consumer electronics.
  • Manufactured to meet stringent quality standards, it delivers reliable operation over extended use.
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JANTX2N2369AUA/TR Overview

The JANTX2N2369AUA/TR is a military-grade bipolar junction transistor designed for high-reliability applications requiring robust switching and amplification capabilities. Featuring enhanced current gain and power dissipation parameters, this transistor meets stringent environmental and performance standards. Its hermetically sealed TO-18 metal can package ensures durability under harsh conditions, making it ideal for aerospace, defense, and industrial electronics. Sourced from IC Manufacturer, this transistor delivers consistent performance with guaranteed electrical characteristics tailored for precision analog and switching circuits.

JANTX2N2369AUA/TR Key Features

  • High Current Gain (hFE): Ensures efficient signal amplification, reducing the need for additional gain stages, which simplifies circuit design.
  • Military-Grade Quality: Qualified to MIL-STD-883 standards, assuring reliability in extreme temperature and vibration environments critical for defense applications.
  • Hermetically Sealed TO-18 Package: Provides excellent protection against moisture and contaminants, enhancing long-term device stability and reliability.
  • Enhanced Power Dissipation: Supports higher collector currents and power handling, enabling operation in demanding power switching scenarios.

JANTX2N2369AUA/TR Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 60 V
Collector-Base Voltage (Vcbo) 80 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 0.8 A
Power Dissipation (Pc) 1.0 W
Current Gain (hFE) 100 to 300 (varies by test conditions)
Transition Frequency (fT) 100 MHz (typical)
Package Type Hermetic TO-18 Metal Can

JANTX2N2369AUA/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and military-grade certification, outperforming many commercial equivalents in harsh environments. Its hermetically sealed package enhances moisture resistance, while its high current gain and power dissipation ratings deliver consistent performance in demanding analog and switching applications. These factors combine to provide engineers with a robust and precise solution where failure is not an option.

Typical Applications

  • High-reliability amplification circuits in aerospace and defense systems, where stable gain and ruggedness are crucial under extreme conditions.
  • Switching devices in industrial control systems requiring consistent operation over extended temperature ranges.
  • Signal processing stages in radar and communication equipment benefiting from low noise and high-frequency response.
  • General-purpose military electronics where component qualification and hermetic sealing ensure long-term operational integrity.

JANTX2N2369AUA/TR Brand Info

The JANTX2N2369AUA/TR is part of a specialized family of transistors designed to meet military specifications. Manufactured under rigorous quality controls, this device conforms to MIL-STD-883 standards, providing traceability, performance consistency, and reliability that meet the demands of defense and aerospace industries. Its TO-18 metal can package further reflects the brand??s commitment to durability and environmental protection, ensuring the component??s functionality in critical applications.

FAQ

What does the ??JANTX?? designation signify in this transistor?

The ??JANTX?? prefix indicates that this transistor is a JAN (Joint Army-Navy) qualified device, meaning it meets military standards for reliability and performance. The ??TX?? suffix often denotes a high-quality, tested and screened transistor suitable for defense and aerospace applications.

Can this transistor operate reliably over a wide temperature range?

Yes, the transistor is qualified to operate over extended temperature ranges typically required in military and aerospace environments. Its hermetic TO-18 package helps maintain performance stability across temperature extremes by protecting the device from environmental stresses.

What advantages does the TO-18 metal can package provide?

The TO-18 metal can package offers hermetic sealing, which prevents moisture ingress and protects internal semiconductor material. This packaging enhances the transistor??s reliability and longevity, particularly in harsh or high-vibration environments commonly encountered in industrial and defense applications.

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How does the transistor??s current gain (hFE) affect circuit design?

Higher current gain means the transistor can amplify signals more efficiently, allowing for simpler circuit designs with fewer amplification stages. This can lead to lower power consumption and reduced component count, which is advantageous in complex or space-constrained systems.

Is this transistor suitable for high-frequency switching applications?

With a typical transition frequency around 100 MHz, this transistor supports moderate high-frequency switching and amplification tasks. While it may not be suitable for ultra-high-frequency RF applications, it performs well in many analog and switching circuits within industrial and military systems.

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