JANTX2N2221AUA/TR Overview
The JANTX2N2221AUA/TR is a military-grade NPN bipolar junction transistor designed for high-reliability switching and amplification applications. Featuring a robust collector current rating of up to 800mA and a collector-emitter voltage of 40V, it delivers consistent performance under demanding environmental conditions. This transistor is ideal for engineers seeking a dependable discrete component with enhanced electrical characteristics and proven durability. Available in a TO-18 metal can package, it ensures excellent thermal dissipation and mechanical stability, making it suitable for aerospace, defense, and industrial electronics. For detailed sourcing and technical data, visit IC Manufacturer.
JANTX2N2221AUA/TR Key Features
- High Collector Current Capacity: Supports continuous collector currents up to 800mA, enabling effective handling of moderate power loads in switching and amplification circuits.
- Enhanced Voltage Ratings: With a collector-emitter voltage rating of 40V, it provides reliable operation in circuits requiring moderate voltage endurance, ensuring device longevity.
- Military-Grade Construction: Qualified to MIL-PRF-19500 standards, delivering superior reliability and stability in harsh environments, critical for aerospace and defense applications.
- Low Noise Performance: Designed to exhibit low noise characteristics, improving signal integrity in sensitive analog and RF circuits.
- TO-18 Metal Can Package: Offers excellent thermal conductivity and mechanical ruggedness, facilitating integration in compact and thermally challenging designs.
- Complementary Gain Bandwidth: With a transition frequency (fT) around 300 MHz, it supports high-speed switching and amplification tasks efficiently.
JANTX2N2221AUA/TR Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (Vceo) | 40 | V | Maximum voltage between collector and emitter |
| Collector-Base Voltage (Vcbo) | 75 | V | Maximum voltage between collector and base |
| Emitter-Base Voltage (Vebo) | 6 | V | Maximum voltage between emitter and base |
| Collector Current (Ic) | 800 | mA | Maximum continuous collector current |
| Power Dissipation (Pc) | 625 | mW | Maximum power dissipation at 25??C |
| Transition Frequency (fT) | 300 | MHz | Frequency at which current gain drops to unity |
| DC Current Gain (hFE) | 100 – 300 | Typical current gain at Ic = 150mA, Vce = 10V | |
| Operating Temperature Range | -55 to +125 | ??C | Junction temperature range for reliable operation |
JANTX2N2221AUA/TR Advantages vs Typical Alternatives
This transistor provides a superior combination of voltage and current ratings at a high transition frequency compared to typical general-purpose devices. Its military-grade qualification ensures enhanced reliability and performance stability under extreme conditions, outperforming commercial counterparts in critical applications. The TO-18 metal can packaging further supports better heat dissipation and mechanical robustness, making it an ideal choice for engineers requiring dependable performance in aerospace, defense, and industrial electronics.
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Typical Applications
- General-purpose low noise amplifier circuits, where stable gain and minimal signal distortion are essential for sensitive analog signal processing.
- Switching applications in industrial control systems requiring reliable on/off operations with moderate power handling.
- Signal modulation and driver circuits in communication equipment, leveraging the transistor??s high-frequency response.
- Military and aerospace electronic systems, benefiting from its rugged construction and adherence to stringent qualification standards.
JANTX2N2221AUA/TR Brand Info
The JANTX2N2221AUA/TR is a product line compliant with military specifications and is built to meet rigorous standards for quality and reliability. This transistor is part of a trusted family of discrete semiconductors designed to serve demanding environments, providing engineers and sourcing specialists with confidence in performance consistency and long-term availability. Its specification adherence to MIL-PRF-19500 ensures the device undergoes strict testing and screening processes to maintain operational integrity in critical applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current rating is 800mA, enabling it to handle moderate power loads reliably in both switching and amplification circuits.
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What package type does this transistor come in, and why is it significant?
This device is housed in a TO-18 metal can package, which offers superior thermal dissipation and mechanical durability compared to plastic packages, making it well-suited for harsh operational environments.
Can this transistor operate in high-frequency applications?
Yes, with a transition frequency (fT) of approximately 300 MHz, the transistor supports high-speed switching and amplification, making it suitable for RF and communication circuits.
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Is this transistor suitable for military and aerospace applications?
Absolutely. It meets MIL-PRF-19500 military specifications, ensuring enhanced reliability and performance stability for use in aerospace, defense, and other mission-critical systems.
What temperature range can this transistor reliably operate within?
The device is rated for an operating junction temperature range from -55??C to +125??C, supporting stable operation across a wide variety of industrial and military environments.
