JANTX2N1715S-Transistor Overview
The JANTX2N1715S transistor is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. It operates with a collector current rating suitable for demanding industrial environments, offering excellent gain characteristics and reliable operation under elevated voltage conditions. This transistor is engineered to withstand rigorous military standards, ensuring durability and consistency in critical systems. Its sturdy construction and proven electrical parameters make it ideal for use in power amplification, signal processing, and switching applications within industrial and aerospace sectors. For sourcing and detailed specifications, visit IC Manufacturer.
JANTX2N1715S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 5 A (continuous) |
| Power Dissipation (Ptot) | 75 W |
| DC Current Gain (hFE) | 20 to 70 (at IC=2 A) |
| Transition Frequency (fT) | ?? 3 MHz |
| Operating Junction Temperature (TJ) | -65??C to +200??C |
JANTX2N1715S-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage rating of 80 V, it supports robust operation in high-voltage switching circuits, enhancing system reliability.
- High current capacity: The 5 A continuous collector current enables the transistor to handle heavy loads, making it suitable for power amplification and motor control.
- Wide temperature range: Operational capability from -65??C to +200??C ensures consistent performance in harsh environments such as aerospace and military applications.
- Reliable gain performance: A DC current gain ranging between 20 and 70 at 2 A collector current ensures predictable amplification characteristics, critical for analog signal processing.
Typical Applications
- Power amplification in industrial and aerospace systems, where high collector current and voltage ratings are necessary to drive large loads effectively.
- Switching components in control circuits requiring fast response and reliable operation under elevated voltage and temperature conditions.
- Signal amplification within communication equipment, benefiting from its stable gain characteristics and frequency response.
- Military and defense electronics, where stringent reliability and durability standards must be met for mission-critical systems.
JANTX2N1715S-Transistor Advantages vs Typical Alternatives
This transistor offers superior high-voltage and high-current handling compared to many standard BJTs, providing enhanced reliability in demanding industrial and military applications. Its wide temperature range and stringent qualification under military standards ensure durability and consistent performance where alternatives may fail. The robust gain profile and power dissipation ratings contribute to efficient and stable amplification, making it a preferred choice for engineers prioritizing ruggedness and precision in harsh environments.
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JANTX2N1715S-Transistor Brand Info
The JANTX2N1715S is part of the JANTX series, manufactured to meet military and aerospace quality standards. This transistor is typically produced by reputable semiconductor manufacturers specializing in high-reliability components for defense and industrial markets. The JANTX designation signifies compliance with JEDEC and MIL-STD certifications, ensuring strict quality control and performance consistency. Such components are tested for extended temperature operation and ruggedness, making them trusted solutions for critical electronic assemblies worldwide.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 5 amperes, allowing it to handle significant power loads in switching and amplification applications without degradation.
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Can this transistor operate in extreme temperature conditions?
Yes, it is designed to function reliably across a broad junction temperature range from -65??C up to +200??C






