JANTX2N1714-Transistor Overview
The JANTX2N1714 is a high-performance NPN bipolar junction transistor (BJT) designed for military and industrial applications requiring robust switching and amplification. It features a high collector current capacity and voltage rating, ensuring reliable operation under demanding conditions. With its hermetic metal can package, this transistor is optimized for enhanced thermal stability and long-term reliability. Sourced from a trusted IC Manufacturer, the device is ideal for use in aerospace, defense, and other harsh environments where precision and durability are critical.
JANTX2N1714-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 3 A |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 30 to 70 (at IC=0.5 A) |
| Transition Frequency (fT) | 6 MHz (typical) |
| Package | Hermetic Metal Can (TO-18) |
JANTX2N1714-Transistor Key Features
- High Collector Current Capacity: Supports up to 3 A, enabling effective handling of substantial loads in switching and amplification applications.
- Robust Voltage Ratings: Collector-emitter voltage rating of 80 V ensures reliable operation with high voltage margins for industrial environments.
- Hermetic Metal Can Package: Guarantees superior thermal dissipation and environmental protection, enhancing device longevity in harsh conditions.
- Wide Current Gain Range: DC gain between 30 and 70 allows designers flexibility in optimizing circuit performance for amplification tasks.
Typical Applications
- Power switching circuits in aerospace and defense systems, where reliable high current handling and voltage tolerance are essential for mission-critical operations.
- Amplification stages in industrial control equipment requiring stable gain and thermal resilience.
- Signal processing in harsh environment electronics, benefiting from the device??s hermetic packaging and proven reliability.
- General-purpose transistor applications demanding robust performance under extended temperature and voltage stresses.
JANTX2N1714-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and thermal management compared to typical plastic-encapsulated alternatives, thanks to its hermetic metal can packaging. Its high collector current and voltage ratings provide enhanced power handling without compromising precision. The wide current gain range and military-grade specifications make it ideal for applications requiring consistent performance and durability under extreme conditions.
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JANTX2N1714-Transistor Brand Info
The JANTX2N1714 is part of the JAN (Joint Army-Navy) transistor series, known for meeting rigorous military standards for reliability and performance. Manufactured by reputable semiconductor producers specializing in defense-grade components, this transistor adheres to strict quality assurance and environmental testing protocols. The JAN designation ensures compliance with MIL-PRF-19500 standards, positioning this transistor as a dependable choice in critical industrial and aerospace electronics.
FAQ
What is the maximum collector current supported by this transistor?
The device supports a maximum collector current of 3 A, allowing it to handle relatively high load currents in switching and amplification circuits without risk of damage.
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What type of packaging does the JANTX2N1714 transistor use?
It is housed in a hermetic metal can package, specifically the TO-18, which provides enhanced thermal dissipation and environmental protection compared to standard plastic packages.






