JANTX1N5289-1/TR Silicon Power Transistor, High Voltage, TO-220 Package

  • This device provides controlled switching of high voltages, enhancing circuit protection and stability.
  • It features a rugged construction that supports consistent performance under varying electrical loads.
  • The compact package design optimizes board space, facilitating integration into dense electronic assemblies.
  • Ideal for use in power management circuits, it helps maintain efficient energy distribution and system safety.
  • Manufactured to meet stringent quality standards, ensuring reliable operation over extended service life.
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JANTX1N5289-1/TR Overview

The JANTX1N5289-1/TR is a high-reliability silicon switching diode designed for military and aerospace applications requiring stringent quality and performance standards. Built to MIL-PRF-19500/228, it offers a stable reverse voltage rating and low leakage current, ensuring dependable operation in demanding environments. This diode??s construction supports enhanced surge handling and consistent switching characteristics, making it suitable for critical signal processing and protection circuits. Available in a hermetically sealed DO-35 package, the device provides robust mechanical and environmental protection. For sourcing and detailed technical insights, visit IC Manufacturer.

JANTX1N5289-1/TR Technical Specifications

Parameter Value Unit
Maximum Reverse Voltage (VR) 24 V
Forward Continuous Current (IF) 200 mA
Peak Forward Surge Current (IFSM) 500 mA
Reverse Leakage Current (IR) at VR 100 nA
Junction Capacitance (CJ) 4 pF
Operating Temperature Range (TJ) -55 to +175 ??C
Storage Temperature Range (TSTG) -65 to +200 ??C
Package Type Hermetic DO-35 ?C

JANTX1N5289-1/TR Key Features

  • High Reverse Voltage Capability: Supports up to 24 V reverse voltage, ensuring reliable blocking in high-voltage applications.
  • Low Leakage Current: Maintains leakage currents as low as 100 nA at rated reverse voltage, critical for precision signal integrity.
  • Hermetic DO-35 Package: Provides exceptional environmental protection, resisting moisture and contamination for extended operational life.
  • Wide Operating Temperature Range: Functional from -55 ??C to +175 ??C, suitable for harsh military and aerospace conditions.
  • Surge Current Handling: Capable of withstanding 500 mA peak surge currents, enhancing transient robustness during power surges or pulses.
  • Low Junction Capacitance: At 4 pF, this supports high-speed switching and minimal signal distortion in sensitive circuits.
  • Compliance to MIL-PRF-19500/228: Meets strict military performance standards, ensuring quality and reliability for mission-critical systems.

JANTX1N5289-1/TR Advantages vs Typical Alternatives

This diode offers superior reliability and environmental robustness compared to standard commercial diodes, thanks to its hermetic packaging and military-grade qualification. Its low leakage current and wide temperature tolerance provide more accurate and stable operation in critical applications, while its surge current capability enhances circuit protection. These advantages make it a preferred choice for engineers seeking dependable semiconductor components in demanding defense and aerospace systems.

Typical Applications

  • Signal protection and switching in aerospace avionics, where stable diode performance under temperature extremes is essential for system reliability.
  • Defense communication equipment requiring precise signal rectification and minimal leakage for high-frequency operation.
  • Military-grade power conditioning circuits that benefit from the diode??s surge current tolerance and hermetic sealing.
  • Instrumentation and sensor interfaces in harsh environments, leveraging the component??s wide temperature range and low capacitance.

JANTX1N5289-1/TR Brand Info

This semiconductor device is part of a family designed specifically to meet military performance standards under MIL-PRF-19500/228. Manufactured with rigorous quality control processes, it embodies the reliability, durability, and precision demanded by defense and aerospace industries. The hermetically sealed package ensures protection against environmental stressors, making it ideal for long-term deployment in mission-critical electronic systems.

FAQ

What is the maximum reverse voltage rating of this diode?

The maximum reverse voltage rating is 24 volts, which defines the highest voltage the diode can block when reverse biased without breakdown. This rating ensures protection and stable operation in circuits exposed to moderate voltage levels.

How does the hermetic DO-35 package benefit the diode??s performance?

The hermetic DO-35 package offers airtight sealing, protecting the diode from moisture, dust, and other contaminants. This packaging enhances reliability and longevity, especially in harsh environments such as aerospace and military applications where environmental factors can impact electronic components.

What is the significance of the low leakage current specification?

Low leakage current, specified at 100 nanoamps at rated reverse voltage, reduces unwanted power loss and noise in sensitive signal circuits. This characteristic is vital for high-precision applications where signal integrity and low power consumption are priorities.

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Can this diode handle transient surge currents?

Yes, it can handle peak forward surge currents up to 500 milliamps. This capability allows the diode to withstand sudden current spikes without damage, which is important for protecting circuits from transient events like power surges or switching spikes.

What temperature ranges is this diode rated for?

The device operates reliably within a wide temperature range from -55 ??C to +175 ??C, accommodating extreme environmental conditions typical in military and aerospace systems. This broad thermal tolerance ensures consistent performance across varying climates and operational scenarios.

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