JANSU2N2920L-Transistor by JANSU | High-Performance Amplifier | TO-92 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • The device features a key electrical parameter ensuring stable operation under varying load conditions.
  • Its compact package reduces board space requirements, facilitating dense circuit layouts and lightweight designs.
  • Ideal for use in power regulation modules, it enhances system responsiveness and energy management.
  • Manufactured under strict quality controls, the component offers dependable performance over extended use.
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JANSU2N2920L-Transistor Overview

The JANSU2N2920L is a high-performance NPN bipolar junction transistor designed for medium-power switching and amplifier applications. Featuring a collector-to-emitter voltage rating of 40V and a collector current capacity of up to 800mA, this device is optimized for reliable operation in various electronic circuits. Its robust gain characteristics and low saturation voltage make it suitable for efficient signal amplification and switching tasks. Manufactured with quality assured processes, the transistor ensures consistent performance in industrial and consumer electronics. For detailed sourcing and technical support, visit IC Manufacturer.

JANSU2N2920L-Transistor Key Features

  • High Collector Current Capacity: Supports up to 800mA, enabling efficient handling of medium-power loads without performance degradation.
  • Voltage Handling: Rated for a collector-emitter voltage of 40V, suitable for a wide range of switching and amplification scenarios.
  • Low Saturation Voltage: Minimizes power loss during conduction, enhancing overall circuit efficiency and thermal management.
  • Gain Consistency: Offers a DC current gain (hFE) range that ensures stable amplification performance across typical operating conditions.

JANSU2N2920L-Transistor Technical Specifications

ParameterValueUnitDescription
Collector-Emitter Voltage (Vceo)40VMaximum voltage between collector and emitter
Collector-Base Voltage (Vcbo)60VMaximum voltage between collector and base
Emitter-Base Voltage (Vebo)5VMaximum voltage between emitter and base
Collector Current (Ic)800mAMaximum continuous collector current
Power Dissipation (Pd)625mWMaximum power dissipation at 25??C
DC Current Gain (hFE)40?C300??Typical range of current gain at Ic=150mA
Transition Frequency (fT)40MHzFrequency at which current gain drops to unity
Storage Temperature Range (Tstg)-55 to +150??CSafe storage temperature limits

JANSU2N2920L-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of voltage and current ratings that outperform many standard NPN transistors in similar packages. Its low saturation voltage enhances power efficiency, reducing heat generation during operation. The wide DC current gain range offers versatility in amplification applications, making it a reliable choice for engineers seeking stable performance in industrial and commercial electronics. Compared to typical alternatives, it delivers improved thermal stability and switching speed.

Typical Applications

  • Signal amplification circuits in audio and general-purpose electronic devices, leveraging its stable gain and frequency response.
  • Medium-power switching applications such as relay drivers and motor control circuits requiring reliable switching under moderate loads.
  • Voltage regulation circuits where consistent transistor gain contributes to stable output voltages.
  • General-purpose transistor use in consumer electronics, instrumentation, and embedded systems.

JANSU2N2920L-Transistor Brand Info

The JANSU2N2920L transistor is produced by JANSU, a recognized manufacturer known for quality semiconductor components tailored for industrial and commercial electronics applications. This product aligns with JANSU??s commitment to delivering reliable and high-performance discrete devices that meet rigorous technical standards. Engineers can expect consistent manufacturing quality and comprehensive datasheet support to facilitate seamless integration into diverse electronic designs.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a continuous collector current of up to 800mA, making it suitable for medium-power applications requiring moderate current handling capabilities.

Can this device operate at high frequencies?

Yes, it features a transition frequency (fT) of approximately 40MHz, which allows it to perform effectively in high-frequency amplifier and switching circuits.

What is the typical gain range of the transistor?

The DC current gain (hFE) typically ranges between 40 and 300 at a collector current of 150mA, providing flexibility across various amplification tasks.

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What are the voltage limitations to consider for safe operation?

The maximum collector-emitter voltage is 40V, collector-base voltage is 60V, and emitter-base voltage is 5V. Operating beyond these limits can damage the device.

Is this transistor suitable for power dissipation in industrial environments?

With a maximum power dissipation rating of 625mW at 25??C, this transistor can handle moderate power loads, making it appropriate for many industrial control and switching applications when proper thermal management is applied.

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