JANSU2N2222A-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • High current gain ensures improved signal strength and stable operation in amplification tasks.
  • The compact package design allows easy integration into tight circuit boards, saving space.
  • Ideal for low-power switching applications, it enhances performance in hobbyist and industrial projects.
  • Manufactured under standardized processes to provide consistent reliability and long-term durability.
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JANSU2N2222A-Transistor Overview

The JANSU2N2222A-Transistor is a robust NPN bipolar junction transistor designed for switching and amplification within various electronic circuits. Featuring a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, it offers reliable performance in medium power applications. Its fast switching speed and moderate gain make it ideal for general-purpose use, including signal amplification and low to medium power switching tasks. Engineered for durability and efficient thermal handling, this transistor is a versatile component trusted by engineers for both prototyping and production. Learn more from IC Manufacturer.

JANSU2N2222A-Transistor Key Features

  • High Collector Current Capacity: Supports up to 800mA, enabling efficient handling of medium power loads in switching and amplification circuits.
  • Moderate Voltage Rating: With a collector-emitter voltage rating of 40V, it suits a wide range of low-to-medium voltage applications.
  • Fast Switching Speed: Ideal for high-speed switching applications, contributing to improved circuit responsiveness and reduced power loss.
  • Reliable Thermal Performance: Designed for effective heat dissipation to maintain stability and long-term reliability under continuous operation.

JANSU2N2222A-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Maximum Collector Current (Ic) 800 mA
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 75 V
Emitter-Base Voltage (Vebo) 6 V
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 (varies by test conditions)
Transition Frequency (fT) 300 MHz (typical)

JANSU2N2222A-Transistor Advantages vs Typical Alternatives

This transistor delivers enhanced switching speed and higher current handling compared to many standard low-power transistors, making it suitable for more demanding industrial and consumer applications. Its balanced voltage rating and gain range provide engineers with a flexible solution that combines efficiency and reliability. The robust design supports consistent thermal performance, reducing failure rates compared to similar alternatives in the same class.

Typical Applications

  • General-purpose switching in industrial control systems where reliable medium power handling and fast response times are essential.
  • Signal amplification in audio and low-frequency circuits requiring stable gain and low distortion.
  • Driver stages for relays, LEDs, and other semiconductor devices in automation and instrumentation.
  • Pulse generation and high-speed switching circuits in communication and timing applications.

JANSU2N2222A-Transistor Brand Info

The JANSU2N2222A-Transistor series from JANSU is well-regarded in the semiconductor industry for delivering consistent performance in a compact TO-18 metal can package. JANSU emphasizes quality manufacturing processes that ensure tight parameter control and long-term reliability. This product line targets engineers requiring dependable, general-purpose transistors with proven electrical characteristics for versatile electronic design and manufacturing.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 800mA, enabling it to handle medium power loads effectively in switching and amplification applications without damage.

Can this transistor be used in high-frequency switching circuits?

Yes, with a typical transition frequency of 300 MHz, it is suitable for high-speed switching applications, making it appropriate for various fast-response electronic designs.

What package type does this transistor come in?

This device is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical robustness for industrial and commercial electronics.

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产品中间询盘

What are the voltage limits I should consider during design?

The maximum collector-emitter voltage is rated at 40V, collector-base voltage at 75V, and emitter-base voltage at 6V. Staying within these limits ensures safe operation and device longevity.

How does the transistor’s gain vary with operating conditions?

The DC current gain (hFE) typically ranges from 100 to 300 depending on collector current and voltage conditions. Designers should consult detailed datasheets for specific application environments to optimize circuit performance.

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